Enhanced free carrier generation in boron nitride films by pulsed laser radiation

Ageev, V. P.; Klimentov, S. M.; Ugarov, M. V.; Loubnin, E.N.; Bensaoula, A.; Badi, N.; Tempez, A.; Starikov, D.

doi:10.1016/s0169-4332(98)00428-0

Cited by 12 publications

(9 citation statements)

References 18 publications

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“…Recently, a significant amount of carbon and oxy-gen impurities has been detected in c-BN thin films by x-ray photoelectron spectroscopy 17 showing that these impurities are common contaminants. Other recent experimental investigations have reported n-type conductivity 13 attributed to carbon contamination during deposition as well as p-type conductivity 8 in intentionally carbon-doped films. Also, it has been pointed out that this impurity could have an important role in the stabilization of paramagnetic defects, e.g., the nitrogen vacancy.…”

Section: Introductionmentioning

confidence: 93%

“…For this, we consider a boron-rich growth condition ( B ϭ B(bulk) ), which appears to be common in several c-BN growth methods. 17,8 Figure 2 shows our results for the formation energies of C N and C B impurities as a function of the Fermi level ( e ). We also include the formation energies of nitrogen and boron vacancies.…”

Section: A Substitutional Carbon In C-bnmentioning

confidence: 99%

“…Recently, considerable efforts have been made in the synthesis of c-BN thin films using a variety of ion-beam-assisted processes [3][4][5][6][7][8][9][10] and several plasma-, ion-, and laser-assisted chemical vapor deposition methods. [11][12][13] These investigations have established that the c-BN formation requires an initial sp 2 -bonded boron nitride layer ͑amorphous and tur-bostratic͒ grown onto the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

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Energetics of carbon and oxygen impurities and their interaction with vacancies in cubic boron nitride

Orellana

Chacham

2000

Phys. Rev. B

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We investigate, through first-principles calculations, the energetics of substitutional carbon and oxygen impurities as well as complexes involving these impurities and vacancies in cubic boron nitride (c-BN). The formation energies and the electronic and structural properties of these defects in their various charge states are investigated. We find that, under a boron-rich condition, both the carbon and the oxygen impurities at the nitrogen site (C N and O N) have formation energies comparable to or lower than those calculated for the vacancies, which are the lowest-energy intrinsic defects. Regarding defect complexes, we find that the donor character observed for the nitrogen vacancy (V N) can be compensated by the C N impurity in the formation of a V N-C N complex which has low formation energies. We also find that the V B-O N complex has low formation energies under n-type conditions. In contrast to the above mentioned complexes, we find that the V B-C B complex has high formation energies under a boron-rich condition, and shall only occur under a nitrogen-rich condition.

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Section: Introductionmentioning

confidence: 93%

Section: A Substitutional Carbon In C-bnmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Energetics of carbon and oxygen impurities and their interaction with vacancies in cubic boron nitride

Orellana

Chacham

2000

Phys. Rev. B

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“…We also know that a no less important influence on absorption, luminescence, and photoelectric properties of hBN comes from nitrogen vacancies and their complexes, since generally a nitrogen deficiency is typical for hBN. Nitrogen vacancies in hBN are donors with activation energies E D = 0.7-1.2 eV [24,25]. Thus a donor defect in the donor-acceptor pair most likely can be a nitrogen vacancy.…”

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confidence: 99%

Luminescence centers in cubic boron nitride

Shishonok

2007

J Appl Spectrosc

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Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385-400 nm and 365-395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300-350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen.Key words: cubic boron nitride, photoluminescence, cathodoluminescence, nature of optically active defects, luminescence center, spectrum with complex structure, resonance vibrations, configuration diagram.Introduction. Cubic boron nitride (cBN), as a wide-gap semiconductor, is a promising material for use in electronics and optoelectronics, detectors and devices suitable for operation under high radiation and temperature conditions and also in chemically aggressive media. Since the defect and impurity structure of cBN has not been well studied, it should be quite effective to analyze it by luminescence correlated with the macroscopic characteristics of the material, taking into account the indicated practical applications.From the standpoint of basic research on cBN, of course, direct analysis of the nature of the optical transitions at the luminescence centers in cBN is of interest, including comparison with its closest Group III-Group V analogs: diamond and gallium nitride.Thus in the luminescence spectra of gallium nitride, we observe a sufficient number of features of a type associated with donor-acceptor recombination or with recombination on free or bound excitons [1]. Of course, in the indicated cases, oppositely charged impurities or defects are present simultaneously in GaN which are introduced into the material by doping or are present in the material as intrinsic defects. Effective doping of diamond is difficult, and obtaining diamond with n-type conductivity is problematic. This is explained by the lack of luminescence centers of the above-indicated type in diamond [2] and formation of many defects in diamond such that electronic transitions in them are intracenter transitions.The number of luminescence centers in cBN that have been detected so far is small compared with diamond and GaN, and only isolated centers have been thoroughly studied. Based on the hypothetical nature of the optical transitions at these centers, the overall results of luminescent studies of cBN show considerable similarity to diamond. Thus in the luminescence spectra of cBN, the predominant bands...

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“…Up to now, the BCN films have been prepared successfully by many methods, such as chemical vapor deposition [7], physical vapor deposition [8], ion beam deposition [5] and pulsed laser deposition [9].…”

mentioning

confidence: 99%

Investigation of BCN Films Deposited at Various$hboxN_2/hboxAr$Flow Ratios by DC Reactive Magnetron Sputtering

Ma²,

Su³

2006

IEEE Trans. Plasma Sci.

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In this paper, boron carbonitride films were deposited by a dc reactive unbalanced magnetron sputtering of conductive B 4 C target in a mixture gas of nitrogen and argon. The films with various content of N were obtained by a varying N 2 /Ar flow ratio in the mixed gas from 0/100 to 30/100. Structures and compositions of the films were investigated by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The results show that the content of B, C, N, and the ratio of each element binding states depend on the ratio of N 2 /Ar flow. The nitrogen content showed the rising tendency and then came to the saturation stage with an increasing N 2 /Ar flow ratio. The maximal N content of 33.1 at.% was obtained when N 2 /Ar flow ratio was 30/100. Nitrogen in the film is prior to binding with B forming sp 2 B-N bond, and then with C forming sp 2 C-N bond, when the N 2 /Ar ratio is over a certain value during the nitrogen was introduced into a vacuum chamber. The results of the FTIR indicate that the film is a compound of B-C-N atomic hybridization.Index Terms-Bonding configurations, boron carbonitride (BCN) film, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS).

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Enhanced free carrier generation in boron nitride films by pulsed laser radiation

Cited by 12 publications

References 18 publications

Energetics of carbon and oxygen impurities and their interaction with vacancies in cubic boron nitride

Energetics of carbon and oxygen impurities and their interaction with vacancies in cubic boron nitride

Luminescence centers in cubic boron nitride

Investigation of BCN Films Deposited at Various$hboxN_2/hboxAr$Flow Ratios by DC Reactive Magnetron Sputtering

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