Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO₂ Regulating Layer

Abstract

HfAlO film-based ferroelectric memory is a strong contender for the next-generation nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small compared to other Hf-based ferroelectric films at low annealing temperatures. In order to further improve the remnant polarization of the device, the ferroelectric memory with metal-ferroelectric-metal structure using ZrO 2 as the regulating layer (RL) is designed and fabricated. Experimental results show that the device with the ZrO 2 regulating layer exhibits triple enhancement, which may be due to the fact that ZrO 2 RL has an effect on the enhancement of the ferroelectric phase. In addition, the device with ZrO 2 regulating layer exhibits a superior ON/OFF conductance ratio, endurance, and retention characteristics, demonstrating potential for application to memory. This work provides an effective way to improve the ferroelectricity in HfAlO films at low annealing temperatures.

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

“…In contrast, noticeable diffraction peaks are detectable in the La:HfO 2 film after the insertion of ZrO 2 , suggesting that ZrO 2 insertion can facilitate the crystallization of La:HfO 2 and lead to an increased presence of the o-phase. This theoretical study validates that such increase in the o-phase composition is conducive to promoting the ferroelectric properties of the ferroelectricity in the HfO 2 -based ferroelectric device. ,, …”

“…This theoretical study validates that such increase in the o-phase composition is conducive to promoting the ferroelectric properties of the ferroelectricity in the HfO 2 -based ferroelectric device. 35,37,38 To study the interlayer on the breakdown robustness of La:HfO 2 -based devices, the P−V characteristics at different voltages for both La:HfO 2 and HZH devices were performed. The operating waveform schematic is displayed in Figure 4a.…”

Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications

“…18,19 Among them, hafnium-based ferroelectric field effect transistors (FeFETs) have attracted a lot of attention due to their advantages such as scalability, 20 low power consumption, and fast response speed, and are potential candidates for implementing logic and storage in a single transistor. 21–23 Among the various doping elements, such as Zr, 24,25 Al 26,27 and La 28–30 etc. , the La atom has gradually become popular for researchers due to its large ionic radius, low electronegativity and strongest stabilizing effect on HfO 2 .…”

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2 interfacial layer

“…been made to overcome this problem [6][7][8][9]. For example, Lomenzo et al revealed that the TaN/HfO 2 /Ge capacitor exhibited a larger remanent polarization P r and better endurance than TaN/HfO 2 /Si device due to the absence of interfacial layer formed on the Ge surface [10].…”