Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films
Kangli Xu,
Tianyu Wang,
Yongkai Liu
et al.
Abstract:In this article, the effect of the
ZrO2 intercalation
layer on the ferroelectric properties and the tunneling electroresistance
(TER) effect of Hafnium–Lanthanum oxide (La:HfO2)-based ferroelectric tunnel junction (FTJ) devices were systematically
investigated for the first time. Compared with the initial La:HfO2 device, an improved value of remnant polarization (2P
r) ∼16.3 μC/cm2@4 V
by intercalating the ZrO2 interlayer can be observed. The
underline mechanism for the enhanced ferroelectric properties of La:… Show more
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