Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius

Choi, Ji Min; Le, Quyet Van; Hong, Koo Tak; Moon, Cheon Woo; Han, Ji Su; Kwon, Ki Chang; Cha, Pil-Ryung; Kwon, Yongwoo; Kim, Soo Young; Jang, Ho Won

doi:10.1021/acsami.7b08197

Cited by 144 publications

(133 citation statements)

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“…The cycling endurance property of the perovskite memory device was measured using consecutive write‐read‐erase‐read voltage pulses . I LRS and I HRS were recorded after each set and reset cycle, as shown in Figure c.…”

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confidence: 99%

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Zou

2019

Physica Rapid Research Ltrs

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Recently, metal halide perovskites have been widely used and considered as an alternative to oxides or chalcogenides in memory devices due to the high on–off ratio and low operating voltage, as well as ease of fabrication. However, most of the perovskite thin films in previous studies have been deposited by lab‐scale solution‐processed methods. They are not directly applicable to larger‐scale and volume manufacturing, hindering the commercialization of this technology. Herein, the performance of memory devices based on vacuum‐deposited inorganic perovskite (VDIP) is investigated for the first time. The optimized VDIP‐based memory devices exhibit reliable and reproducible resistive switching (RS) behaviors with a high on–off ratio (>100), low set/reset voltage (<2 V), and reversible RS by fast pulse‐voltage operations. Furthermore, the devices show an excellent ambient stability, and no obvious degradation is observed after storage in an ambient condition for 30 days. The memory devices on flexible substrates also show a good mechanical flexibility under a bending stress. In addition, a VDIP memory array with 16 × 16 memory cells on a large‐scale substrate is demonstrated, suggesting the strong potential of the VDIP for high‐density, large‐area storage devices.

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confidence: 99%

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Zou

2019

Physica Rapid Research Ltrs

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“…[9,16] These outstanding properties are suitable for next-generation resistive switching memories. [9,16] These outstanding properties are suitable for next-generation resistive switching memories.…”

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confidence: 99%

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures

Lee

Choi

Jeon

et al. 2018

Adv Elect Materials

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exhibit low-operation voltages, reduced power consumption, high on/off ratios, and remarkable mechanical flexibility. [9,16] These outstanding properties are suitable for next-generation resistive switching memories. However, the present HPbased resistive switching memories have critical weaknesses, such as short endurance and poor air-stability. Even though conventional CBRAMs recorded over 10 6 cycles of endurance, halide perovskite based resistive switching devices exhibited around 10 3 cycles of endurance. [17,18] To overcome these limitations, diverse solutions have been reported. One strategy is discovering and synthesizing more stable chemical compositions of HPs. To obtain stable resistive switching properties, various compositions of HPs have been investigated and reported. [19][20][21] Another strategy is adopting a passivation layer on HP films, such as polymethyl methacrylate (PMMA), zinc oxide, and ethylene diamine, so as to isolate the films from the atmosphere and complement their defects. [22][23][24][25] The other strategy is by improving the morphology of the HP films. In this regard, solvent engineering can be employed. By dripping antisolvents, such as toluene, benzene, and chlorobenzene, and adding hydroiodic acid solution as an additive in the precursor solution of HPs, morphologically uniform and high quality HP films [26][27][28][29] can be obtained. Nevertheless, these strategies still could not provide the fundamental solutions to the degradation mechanism, in which the devices are usually stuck in low resistance states (LRS, Figure S1, Supporting Information).We have been interested in the use of HPs for resistive switching devices because HP easily changes its composition and crystalline structure by a certain tolerance factor (t) value. [30,31] The methylammonium lead iodide (MAPbI 3 ) crystalline structure is a pseudocubic structure under ambient conditions. However, the MA + cation of MAPbI 3 in BX 6 octahedral void causes a disordered structure and exhibits hysteresis, which is an important factor in the resistive switching behavior. [32,33] Hence, MAPbI 3 is weak under ambient conditions because of the volatile MA + cation. On the other hand, the RbPbI 3 crystalline structure is orthorhombic, which is extremely stable under ambient conditions because of the less volatile Rb + cation and can be stabilized as a 1DRecently, halide perovskites (HPs), which exhibit resistive switching (RS) behaviors, are proposed as a promising candidate for next-generation memory because of their low power consumption, low cost, and mechanical flexibility. However, HP-based memories have crucial problems related to short endurance and vague switching mechanism. Here, the RS behaviors of switchable methylammonium lead iodide (MAPbI 3 ) and nonswitchable rubidium lead iodide (RbPbI 3 ) mixtures are reported and it is elucidated on the source of the switching phenomena. By controlling the ratio of rubidium iodide (RbI)/ methylammonium iodide (MAI), five compositions of the mixture of RbPbI 3 and MAPbI 3 ...

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“…The parameter V stop controls the SW and cycling endurance . According to previous reports, the formation/rupture of V I‐ based CFs under an electric field might be responsible for the RS mechanism of CH 3 NH 3 PbI 3 ‐based RRAM . In addition, the RS of Al/CH 3 NH 3 PbI 3 /FTO devices exhibit a self‐limited effect during the set transition.…”

Section: Resultsmentioning

confidence: 90%

Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory

Ren

Wang

et al. 2018

Adv Materials Technologies

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As one key issue of resistive switching (RS) memory, the cycling endurance is poorly understood in hybrid perovskite‐based memory devices. Here, the cycling failure and the corresponding cycling‐induced degradation of CH3NH3PbI3‐based resistive random access memory devices are discussed. The high resistance state clearly decreases with the number of operation cycles, finally triggering irreversible failure in the collapse of switching window. By monitoring the I–V curves for all cycles, a negative set event is observed to be the critical turning point that considerably accelerates the cycling degradation rate. The decrease of |Vset| and |Vreset| indicates a reduction of the migration barrier of iodine vacancies (VI), which accounts for the appearance of a negative set after cycling. The understanding of RS cycling degradation can promote the optimization of device endurance by slowing the defect accumulation rate.

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Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius

Cited by 144 publications

References 43 publications

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures

Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory

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Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius

Cited by 144 publications

References 43 publications

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3, Orthorhombic RbPbI3, and Their Mixtures

Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory

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Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures