Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe<sub>2</sub>/n-MoS<sub>2</sub> van der Waals heterojunctions

Wang, Bin; Yang, Shengxue; Wang, Cong; Wu, Minghui; Huang, Li; Liu, Qian; Jiang, Chengbao

doi:10.1039/c7nr03445h

Cited by 74 publications

(59 citation statements)

References 42 publications

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“…Under this circumstance, the photocurrent on/off ratio is up to 10 5 and the dark current is extremely low (3 pA). To our best knowledge, other vdWHs photodetectors cannot achieve comparable performance even applied a bias or tuned by gate . Comparing many factors of similar photodetectors, the appropriate thickness may contribute to this merit.…”

Section: Resultsmentioning

confidence: 99%

High‐Performance Photovoltaic Detector Based on MoTe₂/MoS₂ Van der Waals Heterostructure

Chen

Wang

et al. 2018

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Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe /MoS vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

High‐Performance Photovoltaic Detector Based on MoTe₂/MoS₂ Van der Waals Heterostructure

Chen

Wang

et al. 2018

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“…The photocurrent of 2D SnO/In 2 O 3 devices increases with a decreasing illumination wavelength, due to the fact that higher excitation energy provided by higher photon energies produces more photoexcited carriers in the CB of the material system . It also seems that the heterojunction is n‐type dominating (also confirmed from Figure S10 in the Supporting Information) . The photoresponsivity ( R ) of the photodetector is defined as the photocurrent generated per unit power of the incident light on the selective area of a photodevice.…”

mentioning

confidence: 84%

“…The rise time ( t rise ) and fall time ( t fall ) were defined to describe the time for photocurrent reaching 90% and decreasing to 10% of the peak values . Thus, the measured t rise and t fall can be estimated to be ≤1 ms, which is in the top range of existing 2D p–n heterojunction devices . In addition, Figure S12 in the Supporting Information reveals the heterostructure photocurrent responses at a smaller bias voltage of V ds = −1 V as a function of time for the heterostructure photodetector.…”

mentioning

confidence: 99%

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

Alsaif

Kuriakose

Walia

et al. 2019

Adv Materials Inter

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COMMUNICATION (1 of 8)deployed in the form of van der Waals (vdW) heterostructures that enable fascinating coupled properties from stacked individual layers of 2D sheets which can be exploited in several applications, [2,6,7] including tunneling transistors, [8] quantum hall systems, [9] electrochemical hydrogen evolution reaction, [10] optoelectronics, [4,11] and electronics. [3,12] The p-n junctions are the building blocks of the semiconductor industry, in which the p-n junction heterostructures made from ultrathin materials are of great interest in specialized electronics, optoelectronics, and photonics due to their intriguing coupled properties of the different crystals. [5][6][7]13] Several methods for exfoliation and/or deposition exist such as chemical vapor deposition (CVD), [7] pulsed laser deposition (PLD), [14] molecular beam epitaxy (MBE), [15] pick-and-lift vdW technique, [16] and mechanical exfoliation. [17] These conventional approaches are time consuming and require complicated fabrication processes, [18] yet resulting in devices with small effective areas. [19] Liquid metals are emerging materials which can be used in microfluidics components, [20] sensors, [21] electrodes, [22] phototransistors, [23] flexible and stretchable devices, [24] disease treatment, [22] biomedical field, [22] and in synthesis of low-dimensional materials. [25] Liquid metals have been shown to form a naturally occurring atomically thin layer of oxide at their interface with air, [26][27][28][29] and using liquid metal as a reaction solvent can give access to a sizable portion of oxide elements including oxides which are intrinsically nonlayered crystals. [26] The exfoliated oxides can be converted to sulfides and phosphates. [30] Combination of these atomically thin layers should provide a vast number of vdW heterostructures that are yet to be explored.In this work, atomically thin oxide skin of low melting point liquid metals of tin and indium including p-type tin oxide (SnO) [27] and n-type indium oxide (In 2 O 3 ) [31] are stacked to produce large-area heterostructures with a high degree of homogeneity. Indeed, the p-n vdW heterojunctions feature current rectification properties with exceptionally fast photoresponse times and high sensitivity for UV light. The demonstrated liquid metal synthesis framework offers the possibility of synthesizing and exploring a range of tailored heterostructures for applications in next-generation optoelectronic and photodetection devices.

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“…[130] The results show that the MoTe 2 / MoS 2 vdWH FET has admirable gate tunable rectification behavior with a high on/off ratio of ≈780. Wang et al have studied the photoelectric properties of the p-MoTe 2 /n-MoS 2 vdWH, both in theory and experiment.…”

Section: Fetmentioning

confidence: 89%

“…FETs p-MoTe 2 /n-MoS 2 MX 2 /semiconductor On/off ratio ≈ 780 Wang et al [130] ReSe 2 /MoS 2 MX 2 /semiconductor Electron mobility ≈ 4 cm 2 (V s) −1 On/off ratio ≈ 6 × 10 4…”

Section: Devicementioning

confidence: 99%

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

Cheng

et al. 2018

Adv Elect Materials

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Due to the direct bandgap with coupled spin–valley physics, semiconducting MX2 (M = Mo, W; X = S, Se) materials have attracted considerable attention and have numerous proposed applications. With the development of 2D materials research, many 2D materials have been discovered, such as insulators, semiconductors, ferromagnetic semiconductors, topological insulators, metals, and ferromagnetic metals. van der Waals heterojunctions (vdWHs), based on MX2 and other 2D materials, have attracted increasing attention because of their various potential applications, such as field effect transistors, solar cells, photodetectors, light emitting diodes, and lasers. Based on the functionality of 2D materials, vdWHs are classified into six classes: MX2/semiconductors, MX2/insulators, MX2/topological insulators, MX2/ferromagnetic semiconductors, MX2/metals, and MX2/ferromagnetic metals. For each class of vdWHs, the structural, electronic, and optical properties, as well as potential applications in electronics and optoelectronics, are reviewed. Finally, an overview of perspectives and challenges regarding vdWHs based on MX2 materials is presented.

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Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe₂/n-MoS₂ van der Waals heterojunctions

Cited by 74 publications

References 42 publications

High‐Performance Photovoltaic Detector Based on MoTe₂/MoS₂ Van der Waals Heterostructure

High‐Performance Photovoltaic Detector Based on MoTe₂/MoS₂ Van der Waals Heterostructure

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

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Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions

Cited by 74 publications

References 42 publications

High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure

High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure

2D SnO/In2O3 van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

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Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe₂/n-MoS₂ van der Waals heterojunctions

High‐Performance Photovoltaic Detector Based on MoTe₂/MoS₂ Van der Waals Heterostructure

High‐Performance Photovoltaic Detector Based on MoTe₂/MoS₂ Van der Waals Heterostructure

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals