High‐Performance Photovoltaic Detector Based on MoTe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterostructure

Chen, Yan; Wang, Xudong; Wu, Guangjian; Wang, Zhen; Fang, Hehai; Lin, Tie; Sun, Shuo; Shen, Hong; Hu, Weida; Wang, Jianlu; Sun, Jie; Meng, Xiangjian; Chu, Junhao

doi:10.1002/smll.201703293

Cited by 212 publications

(192 citation statements)

References 42 publications

(70 reference statements)

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“…Efficiency and cost have emerged as key metrics for any alternate technology. TMDC-based PV devices with good performance and tunability have been demonstrated [110,[120][121][122][123][124][125]. The following discussion on several studies on 2D-PV devices helps us get an idea of the current status and future path for the field.…”

Section: Photovoltaicsmentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

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Section: Photovoltaicsmentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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“…The relationships of R and D* with light intensity are plotted in Figure C. Responsivity is expressed as R = I ph /( PS ), where I ph is the photocurrent, P is the light intensity, and S is the effective illuminated area ( S = 1.8 × 10 −6 cm 2 in our case). Detectivity indicates the minimum detectable irradiance.…”

Section: Comparison Of Vdwe Cdte Photodetectors and Other Photodetecmentioning

confidence: 99%

Ultrahigh‐Detectivity Photodetectors with Van der Waals Epitaxial CdTe Single‐Crystalline Films

Lian

Zhu

Wang

et al. 2019

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Van der Waals epitaxy (vdWE) is crucial for heteroepitaxy of covalence‐bonded semiconductors on 2D layered materials because it is not subject to strict substrate requirements and the epitaxial materials can be transferred onto various substrates. However, planar film growth in covalence‐bonded semiconductors remains a critical challenge of vdWE because of the extremely low surface energy of 2D materials. In this study, direct growth of wafer‐scale single‐crystalline cadmium telluride (CdTe) films is achieved on 2D layered transparent mica through molecular beam epitaxy. The vdWE CdTe films exhibit a flat surface resulting from the 2D growth regime, and high crystal quality as evidenced by a low full width at half maximum of 0.05° for 120 nm thick films. A perfect lattice fringe appears at the interfaces, implying a fully relaxed state of the epitaxial CdTe films correlated closely to the unique nature of vdWE. Moreover, the vdWE CdTe photodetectors demonstrate not only ultrasensitive optoelectronic response with optimal responsivity of 834 A W−1 and ultrahigh detectivity of 2.4 × 1014 Jones but also excellent mechanical flexibility and durability, indicating great potential in flexible and wearable devices.

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“…But compared to two‐terminal device, the three‐terminal devices make the circuit more complex, and the continuously applied gate bias to constrain dark current is energy‐consuming. Another widely reported method is to form heterojunctions using different kinds of TMDs stacking together . This method could effectively reduce dark current and enhance the performance of photodetectors, however, the fabrication process of transferring one kind of TMD material to another is complicated and inefficient, which makes the method difficult for large scale application.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we introduced a 2D OIHP (PEA) 2 PbI 4 , which acted as an electron reservoir on traditional multilayer MoS 2 ‐based photodetectors. 2D OIHP (PEA) 2 PbI 4 is reported to be a p‐type semiconductor which has a layered‐stack structure constrained by van der Waals force. The special layered structure makes the 2D perovskites more stable in the air compared to their 3D counterparts .…”

Section: Introductionmentioning

confidence: 99%

Extremely Low Dark Current MoS₂ Photodetector via 2D Halide Perovskite as the Electron Reservoir

Wang

Chen

et al. 2020

Advanced Optical Materials

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Toward pursuing high‐performance photodetectors based on 2D transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2), it is desirable to reduce the high dark current and sluggish response time. Here, in multilayer MoS2‐based photodetectors, a 2D halide perovskite, (C6H5C2H4NH3)2PbI4 ((PEA)2PbI4), is introduced as a bifunctional material: both as electron reservoir to reduce free carriers and passivation agent to passivate defects. Surprisingly, dark current is suppressed by six orders of magnitude after coating a (PEA)2PbI4 thin layer onto pristine MoS2 photodetector, with the dark current decreased to 10−11 A. This huge reduction of dark current suggests an efficient interlayer charge transfer from MoS2 to (PEA)2PbI4, which is further verified by photoluminescence quenching phenomenon. It indicates that (PEA)2PbI4 serves as electron reservoir to reduce carrier density of MoS2, resulting in ultrahigh detectivity (1.06 × 1013 Jones). Moreover, the response speed is also accelerated by more than 100‐fold due to passivation by 2D perovskite. In addition, it is found that this type of photodetectors can further work at self‐power mode (with the bias of 0 V). Therefore, the strategy of applying 2D perovskite on the surface of TMDs provides a novel way to fabricate high‐performance photodetectors.

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High‐Performance Photovoltaic Detector Based on MoTe₂/MoS₂ Van der Waals Heterostructure

Cited by 212 publications

References 42 publications

Optoelectronic and photonic devices based on transition metal dichalcogenides

Optoelectronic and photonic devices based on transition metal dichalcogenides

Ultrahigh‐Detectivity Photodetectors with Van der Waals Epitaxial CdTe Single‐Crystalline Films

Extremely Low Dark Current MoS₂ Photodetector via 2D Halide Perovskite as the Electron Reservoir

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High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure

Cited by 212 publications

References 42 publications

Optoelectronic and photonic devices based on transition metal dichalcogenides

Optoelectronic and photonic devices based on transition metal dichalcogenides

Ultrahigh‐Detectivity Photodetectors with Van der Waals Epitaxial CdTe Single‐Crystalline Films

Extremely Low Dark Current MoS2 Photodetector via 2D Halide Perovskite as the Electron Reservoir

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High‐Performance Photovoltaic Detector Based on MoTe₂/MoS₂ Van der Waals Heterostructure

Extremely Low Dark Current MoS₂ Photodetector via 2D Halide Perovskite as the Electron Reservoir