Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation

Abstract

Limiting efficiencies of tandem solar cells consisting of III-V nanowire arrays on silicon J. Appl. Phys. 112, 064321 (2012) Dislocation-limited open circuit voltage in film crystal silicon solar cells Appl. Phys. Lett. 101, 123510 (2012) Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells Appl. Phys. Lett. 101, 123904 (2012) Enhanced recovery of light-induced degradation on the micromorph solar cells by electric field

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation

“…Although further study on the properties of these dense QDs is in demand, we argue that the dense GeSi QDs on miscut substrates will have promising applications in optoelectronic devices and solar cells. 1, 3,30 In summary, the substantial enhancement of self-assembly and even a growth mode transition of GeSi QDs on slightly miscut Si (001)/θ substrates are discovered. The extremely dense QDs can be readily obtained on slightly miscut Si (001)/θ substrates even without wetting layer.…”

Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4

“…Ge quantum dots (QDs) in SiO 2 have been already used for the fabrication of QD-based memories, 9 efficient light harvesters, 2,3,10 or for the application in novel multi-junction solar cells. 6,11 However, the optical behavior and the band-gap tuning of Ge QDs does not depend on QD size only, as a basic confinement effect rule predicts. Other effects have been demonstrated to have a strong role in the light absorption/emission process such as: mid-gap states and defects at the interface with the matrix, [12][13][14] crystallinity (amorphous (a-) or crystalline (c-)) of QDs, 15 the shape of the QDs and their size distribution, 16,17 as well as the nature of the surrounding matrix.…”

“…5,6 In particular, Ge nanostructures gained a renewed interest because of their larger absorption, stronger quantum confinement effect (QCE) due to the larger Bohr radius ($24 nm) 7,8 and lower synthesis temperature in comparison with Si nanostructures. The exploitation of these properties and their application for efficient light harvesting devices have been quite extensively studied in recent years.…”

Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence

“…It is meaningful for improving fabrication procedures to monitor side-effects induced by localizations. Meanwhile, it's known that spatial confinement can lead to significant enhancement of Auger recombination [10][11][12][13][14][15], but it remains unclear whether Auger Recombination is an issue in s-shape behavior. Moreover, the alloy scattering in disordered system can give rise to Auger impact by compensating the momentums of carriers [16,17].…”