Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode

Ansari, Mohd Zahid; Parveen, Nazish; Nandi, Dip K.; Rahul, Ramesh; Ansari, Sajid Ali; Cheon, Taehoon; Kim, Soohyun

doi:10.1038/s41598-019-46679-7

Cited by 75 publications

(47 citation statements)

References 67 publications

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“…Ansari et al. [ 250 ] used Sn(NMe 2 ) 4 and H 2 S at 160 °C to deposit SnS x films that predominantly contained the SnS 2 phase with a minor SnS contribution. A 50 nm SnS x film on porous Ni foam performed the best, resulting in an areal capacitance of 800 mF cm −2 and retention of more than 90% of the initial capacity after 5000 charge–discharge cycles.…”

Section: Applications Of Atomic Layer Deposited 2d Metal Dichalcogenidesmentioning

confidence: 99%

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Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Applications Of Atomic Layer Deposited 2d Metal Dichalcogenidesmentioning

confidence: 99%

“…Plasmonics [248] 60-140 25-100 nm films (amorp.) PEC [249] 160 20-80 nm films (≈10 nm) SC [250] Sn(OAc) 4 + H 2 S 150 (200-350, H 2 S) 2-11 ML films (as-dep. amorp., ann.…”

mentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…For example, SnS x grown on Ni‐foam by ALD exhibited a superior electrochemical performance with areal capacitance 805.5 mF cm −2 at 0.5 mA cm −2 current density and fairly stable 5000 charge–discharge cycles. [ 32 ] A pseudocapacitive core–shell type hybrid electrode where shell Ni/NiO was deposited over ZnO/Ti nanowires showing ultrahigh capacitance of 2440 F g −1 with extremely good rate capability of 80.5% owing to fast electron transport and short electron transfer pathways. [ 33 ] Flexible supercapacitors composed of peptide‐Co 9 S 8 core–shell type have also been investigated as wearable electrodes, where Co 9 S 8 was atomically layered.…”

Section: Introductionmentioning

confidence: 99%

Encapsulation of Co₃O₄ Nanocone Arrays via Ultrathin NiO for Superior Performance Asymmetric Supercapacitors

Adhikari

Seenivasan

et al. 2020

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traditional battery systems. [10,11] Practically, lower energy density bounds the applicability of supercapacitors over battery systems, leaving more room in developing high energy density supercapacitors without having to compromise the power competence. [12-14] A well-known approach offering such outstanding energy density is via fabrication of asymmetric supercapacitor device that focusses on the positive materials excellency exhibiting high specific capacitance and providing a broad potential window when combined with a double-layer type negative electrode material. [15-17] Co 3 O 4 , a pseudocapacitive metal oxide, belonging to the family of spinel is a promising positive active material in electrochemical energy storage devices owing to its high specific capacitance (3560 F g −1) theoretically with being earthabundant, cost-effective, and also environment friendly. [18-20] Pseudocapacitors follow faradaic redox electrochemical reactions on the material's surface through continuous intercalation/deintercalation of electrons or ions which makes the surface vulnerable to destruction resulting in lower efficiency of the electroactive material affecting the electrochemical cycles. [21-23] Therefore, much effort has been put forward to increase the efficiency and stability of the Co 3 O 4 structures through nanostructured, [18] heterostructured, [24,25] and core-shell type structures [26] to reduce the structural deterioration from Co 3 O 4 and increase the overall specific capacitances. For instance, a 3D hierarchical structure of CoWO 4 /Co 3 O 4 was developed that exhibited significantly high specific capacitance of 1728 F g −1 at a current density of 1 A g −1 retaining about 85.9% specific capacitance after 5000 cycles. [27] Paliwal and Meher design a heterostructure of Co 3 O 4 /NiCo 2 O 4 perforated nanosheets that delivers specific capacitance of 1767 F g −1 at a current density of 0.5 A g −1 maintaining 552 F g −1 capacitance at high current density 16 A g −1. Additionally, the asymmetric device composed of Co 3 O 4 /NiCo 2 O 4 ||N-rGO retains 93.8% areal capacitance after 10 000 operating cycles. [28] An excellent core-shell type CoO@Co 3 O 4 nanocrystals were grown solvothermally which delivered 3377 F g −1 specific capacitance at current density 2 A g −1 and the capacity retention was about 58.6% after 4000 charge-discharge cycles. [29] Lu et al. reported Co 3 O 4 /CoS core-shell nanosheets grown over Ni-foam by room temperature sulfurization process. The structure showed an improved specific capacitance as high as 1658 F g −1 at 1 A g −1 Designing of multicomponent transition metal oxide system through the employment of advanced atomic layer deposition (ALD) technique over nanostructures obtained from wet chemical process is a novel approach to construct rational supercapacitor electrodes. Following the strategy, core-shell type NiO/Co 3 O 4 nanocone array structures are architectured over Ni-foam (NF) substrate. The high-aspect-ratio Co 3 O 4 nanocones are hydrothermally grown over NF following the p...

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“…[ 145 ] According to the change of material in the deposition process, the commonly used thin film coating techniques on curved surface can be divided into physical thin film deposition [ 146–149 ] and chemical thin film deposition. [ 150–158 ]…”

Section: Techniques For Direct Fabrication Of Curved Electronicsmentioning

confidence: 99%

Fabrication Techniques for Curved Electronics on Arbitrary Surfaces

Tian

Luo

et al. 2020

Adv Materials Technologies

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Curved electronics, which are better coordinated and blended with the natural world due to the characteristics of large contact area, high space adaptability, etc., have been widely used in a quantity of areas ranging from conformal curved antennas and sensors in detection and measurement, to artificial smart skin of aerospace. Recent developments in curved electronics have made an increasing progress to the historic drawbacks of conventional planar electronics, however significant challenges still exist. Here, the main kinds of conformal fabrication technologies, including transfer printing, assembly techniques, curved lithography, conformal inkjet printing, 3D printing, and laser direct writing, are reviewed to realize manufacturing deformable/undeformable electronics on curved or arbitrary surfaces. The processes and features of each technology are comprehensively summarized together with their progress and potential values. Finally, the challenges and opportunities for fabricating conformal electronics on arbitrary surfaces are also discussed.

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Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode

Cited by 75 publications

References 67 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Encapsulation of Co₃O₄ Nanocone Arrays via Ultrathin NiO for Superior Performance Asymmetric Supercapacitors

Fabrication Techniques for Curved Electronics on Arbitrary Surfaces

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Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode

Cited by 75 publications

References 67 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Encapsulation of Co3O4 Nanocone Arrays via Ultrathin NiO for Superior Performance Asymmetric Supercapacitors

Fabrication Techniques for Curved Electronics on Arbitrary Surfaces

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Encapsulation of Co₃O₄ Nanocone Arrays via Ultrathin NiO for Superior Performance Asymmetric Supercapacitors