“…1, was also observed over the entire cross-section. It should be noted that due to growth optimization as mentioned in 23 , these precipitates do not affect BZO nanorod growth along c-axis, which was reported as an issue in non-optimized films 25 .Figure 1Cross-section TEM microstructure of a 4.8 µm thick REBCO tape with 15 mol% Zr addition at two magnifications, showing well-aligned BaZrO 3 nano columns interspersed with RE 2 O 3 precipitates.…”
Section: Resultsmentioning
confidence: 95%
“…Previously, near 1000 A/12 mm critical current was achieved in 1.8 µm thick undoped REBCO on IBAD-MgO/LMO substrate in a single pass deposition using the A-MOCVD system 22 . Furthermore, a record high lift factor of 9 was achieved in a 2 µm thick 20 mol% Zr doped REBCO film, at 30 K, 2.5 T (B||c), deposited in a single pass 23 . In addition, up to 4 µm thick undoped REBCO films have been grown without any a-grains in a single pass deposition using the A-MOCVD system 22 .…”
Section: Introductionmentioning
confidence: 97%
“…MOCVD is restricted by its inability to grow thicker films (>1 µm) in a single pass due to its poor temperature control and non-uniform flow distribution which causes a-grains to grow progressively with thickness 15,22,23 . The degradation of performance is at least in part due to this increase in fraction of a-axis oriented grains in thicker films.…”
Section: Introductionmentioning
confidence: 99%
“…The A-MOCVD uses direct ohmic heating of a suspended substrate tape and direct temperature monitoring using non-contact optical probes 22 . A highly laminar and uniform flow has been achieved in the direction perpendicular to tape using a new vapor path design 22,23 . Previously, near 1000 A/12 mm critical current was achieved in 1.8 µm thick undoped REBCO on IBAD-MgO/LMO substrate in a single pass deposition using the A-MOCVD system 22 .…”
Section: Introductionmentioning
confidence: 99%
“…If this goal is achieved, it will greatly simplify the deposition process of thick films due to single pass deposition compared to conventional MOCVD. In addition, if the same high performance is maintained throughout the thickness as in lower thickness tapes 13,15,23 , it will enhance the engineering current density ( J e ) significantly, which will in turn decrease the cost/performance ratio.…”
An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (Jc) of 15.11 MA/cm2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (Ic) value of 8705 A/12 mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author’s knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50 K, respectively, are 15.11, 9.70 and 6.26 MA/cm2, corresponding to equivalent Ic values of 8705, 5586 and 3606 A/12 mm and engineering current densities (Je) of 7068, 4535 and 2928 A/mm2. The engineering current density (Je) at 40 K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5 mol% Zr addition. Such record-high performance in thick films (>1 µm) is a clear demonstration that growing thick REBCO films with high critical current density (Jc) is possible, contrary to the usual findings of strong Jc degradation with film thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar flow achieved in the A-MOCVD system, coupled with optimization of BaZrO3 nanorod growth parameters.
“…1, was also observed over the entire cross-section. It should be noted that due to growth optimization as mentioned in 23 , these precipitates do not affect BZO nanorod growth along c-axis, which was reported as an issue in non-optimized films 25 .Figure 1Cross-section TEM microstructure of a 4.8 µm thick REBCO tape with 15 mol% Zr addition at two magnifications, showing well-aligned BaZrO 3 nano columns interspersed with RE 2 O 3 precipitates.…”
Section: Resultsmentioning
confidence: 95%
“…Previously, near 1000 A/12 mm critical current was achieved in 1.8 µm thick undoped REBCO on IBAD-MgO/LMO substrate in a single pass deposition using the A-MOCVD system 22 . Furthermore, a record high lift factor of 9 was achieved in a 2 µm thick 20 mol% Zr doped REBCO film, at 30 K, 2.5 T (B||c), deposited in a single pass 23 . In addition, up to 4 µm thick undoped REBCO films have been grown without any a-grains in a single pass deposition using the A-MOCVD system 22 .…”
Section: Introductionmentioning
confidence: 97%
“…MOCVD is restricted by its inability to grow thicker films (>1 µm) in a single pass due to its poor temperature control and non-uniform flow distribution which causes a-grains to grow progressively with thickness 15,22,23 . The degradation of performance is at least in part due to this increase in fraction of a-axis oriented grains in thicker films.…”
Section: Introductionmentioning
confidence: 99%
“…The A-MOCVD uses direct ohmic heating of a suspended substrate tape and direct temperature monitoring using non-contact optical probes 22 . A highly laminar and uniform flow has been achieved in the direction perpendicular to tape using a new vapor path design 22,23 . Previously, near 1000 A/12 mm critical current was achieved in 1.8 µm thick undoped REBCO on IBAD-MgO/LMO substrate in a single pass deposition using the A-MOCVD system 22 .…”
Section: Introductionmentioning
confidence: 99%
“…If this goal is achieved, it will greatly simplify the deposition process of thick films due to single pass deposition compared to conventional MOCVD. In addition, if the same high performance is maintained throughout the thickness as in lower thickness tapes 13,15,23 , it will enhance the engineering current density ( J e ) significantly, which will in turn decrease the cost/performance ratio.…”
An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (Jc) of 15.11 MA/cm2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (Ic) value of 8705 A/12 mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author’s knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50 K, respectively, are 15.11, 9.70 and 6.26 MA/cm2, corresponding to equivalent Ic values of 8705, 5586 and 3606 A/12 mm and engineering current densities (Je) of 7068, 4535 and 2928 A/mm2. The engineering current density (Je) at 40 K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5 mol% Zr addition. Such record-high performance in thick films (>1 µm) is a clear demonstration that growing thick REBCO films with high critical current density (Jc) is possible, contrary to the usual findings of strong Jc degradation with film thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar flow achieved in the A-MOCVD system, coupled with optimization of BaZrO3 nanorod growth parameters.
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