A time-average model of the RF plasma sheath was developed. The ion "fluid" equations were used with a frictional force to account for ion-neutral collisions. Consideration of the collision dynamics showed that the frictional force may be taken as proportional to the square of the ion drift velocity. The sheath model was used to investigate the ion energy and flux on the electrodes of plasma reactors. The dimensionless quantity Co (collision number) was found to be important in describing the ion motion in the sheath. An analytical expression for the ion bombardment energy was derived, in terms of Co and the sheath voltage, for the range of parameter values typical of high pressure (-1 torr) diode plasma etchers. An application of the model to an oxygen discharge in a parallel plate reactor was considered. Over the parameter range investigated, the ion bombardment energy was found to be only a few tens of eV, much lower than typical sheath voltages (-200V). The ion bombardment energy was found to be a function of the sheath electric-field-to-pressure ratio. The model provides a framework that can be incorporated into more general plasma reactor models which consider transport and reaction phenomena along surfaces undergoing etching.Within the last decade, dry etching using an RF diode discharge in a chemically reactive gas has become a widespread technique in the fabrication of microelectronic devices. Under conditions of relatively high pressure (-1 torr) and high frequency (-10 MHz), an RF discharge of this kind may resemble an ideal, nonequilibrium, slightly ionized plasma separated from wall and electrode surfaces by a region of positive space charge or sheath. In the sheath region ions are accelerated toward electrode or wall surfaces by the electric field present due to the space charge. In their transit through the sheath, ions may experience collisions, mainly with neutrals owing to the low degree of ionization (~<10-4). Such collisions serve to reduce the energy and randomize the ionic motion. Determination of the ion flux and the energy and angular distribution functions of ions striking the electrodes of plasma reactors is of significant technological interest in semiconductor processing. Such quantities affect both the etching rate and the degree of anisotropy in plasma etching applications. The purpose of this paper is to develop an approximate model to investigate the behavior of ionic species within the high field sheath regions of a gas discharge.Quantities that affect the energy and/or directionality of bombarding ions include the sheath electric-field-topressure ratio (E/p) (1, 2), the applied frequency (3), and the nature and topography of the surface (4, 5). The quantity E/p is a measure of the energy imparted to an ion by the electric field over the distance of one mean fl'ee path. Frequency has a pronounced effect on ion bombardment energy. At low frequencies ions can respond to the instantaneous sheath voltage and, in the absence of collisions, the maximum ion energy would correspo...