We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current.PACS numbers: 73.21. Fg, 72.25.Fe, 78.67.De, 73.63.Hs The discovery of microwave induced oscillations in the resistivity of a two-dimensional electron gas (2DEG) attracted growing attention to an electron magnetotransport in semiconductor nanostructures subjected to mw radiation, see, e.g., [1,2]. The experimental observation of mw-induced effects stimulated much theoretical interest (see [3] and references therein) since they provide information which is complementary to conventional transport. In addition, the mw-induced effects offer new ways for developing sensitive microwave detectors [4]. All these effects have been observed applying an external magnetic field perpendicularly to a 2DEG plane.In this Letter we demonstrate that microwave radiation induces a novel electron transport effect also under an in-plane magnetic field, i.e., in the geometry that excludes the cyclotron motion and Landau quantization of the two-dimensional electrons. The effect is caused by an asymmetric spin-dependent electron energy relaxation of the 2DEG heated by mw radiation [5,6]. In an external magnetic field, this process results in a spin-polarized electric current. The mw-induced currents are observed in two different semiconductor systems: diluted magnetic semiconductor (DMS) (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and InAs/(In,Ga)As QWs. In these structures the spin-polarized electric currents are enhanced due to either the presence of magnetic Mn 2+ ions [6] or the strong spin-orbit coupling in InAs [5].Two n-type doped QW structures have been grown by molecular-beam epitaxy on (001)-oriented substrates. The first sample has a digital alloy DMS QW [7], which is a 10 nm-wide CdTe QW containing three monolayers of Cd 0.86 Mn 0.14 Te (see inset in . Insets show the experimental geometry and the structure sketch.