We derive a four-component Vlasov equation for a system composed of spin-1/2 fermions (typically electrons). The orbital part of the motion is classical, whereas the spin degrees of freedom are treated in a completely quantum-mechanical way. The corresponding hydrodynamic equations are derived by taking velocity moments of the phase-space distribution function. This hydrodynamic model is closed using a maximum entropy principle in the case of three or four constraints on the fluid moments, both for Maxwell-Boltzmann and Fermi-Dirac statistics.
The single graphene layer is a novel material consisting of a flat monolayer of carbon atoms packed in a two-dimensional honeycomb-lattice, in which the electron dynamics is governed by the Dirac equation. A pseudo-spin phase-space approach based on the Wigner-Weyl formalism is used to describe the transport of electrons in graphene including quantum effects. Our full-quantum mechanical representation of the particles reveals itself to be particularly close to the classical description of the particle motion. We analyze the Klein tunneling and the correction to the total current in graphene induced by this phenomenon. The equations of motion are analytically investigated and some numerical tests are presented. The temporal evolution of the electron-hole pairs in the presence of an external electric field and a rigid potential step is investigated. The connection of our formalism with the Barry-phase approach is also discussed.
We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in terms of a set of coupled equations for the electron envelope functions. Its connection with other models present in literature is discussed. As an application we consider the case of a Resonant Interband Tunneling Diode, demonstrating the ability of the model to reproduce the expected behaviour of the current as a function of the applied voltage.
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