Energy Levels and Electrical Activity of Dislocation Electron States in GaAs

Wosiński, T.; Figielski, T.

doi:10.12693/aphyspola.83.51

Cited by 19 publications

(20 citation statements)

References 12 publications

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“…The same trap, called ED1, had been previously found in plastically deformed bulk GaAs and related with 60°-α dislocations [3,4]. The appearance of the ED1 peak in the DLTS spectra of the reference structure points out a large density (about 10 5 cm-2) of dislocations in the GaAs epilayer near the interface which are probably threading dislocations originated in the substrate.…”

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confidence: 67%

Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

1995

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supporting

confidence: 67%

Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

1995

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“…11 together with the values for the minority carrier traps H1 and H2 found in this work. The level HD1 at E V + 0.37 eV has been assigned to β 60°misfit dislocation in GaAs 35 and a band-like state HD3 at E V + 0.7 eV was reported for misfit dislocations in In 0.02 Ga 0.98 As. 7 Finally, hole traps related to EDs with unspecified indium content from 0.05 to 0.24 have been reported.…”

Section: Fig 8 Dlts Spectra For Differentmentioning

confidence: 96%

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Hsu

Simoen

Merckling

et al. 2018

Journal of Applied Physics

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In 0.53 Ga 0.47 As p + n diodes with different densities of extended defects have been analyzed by detailed structural and electrical characterization. The defects have been introduced during Metal-Organic Vapor Phase Epitaxy (MOVPE) growth by using a lattice-mismatched layer on a semi-insulating InP or GaAs substrate. The residual strain and indium content in the n-type In 0.53 Ga 0.47 As layer have been determined by high-resolution X-ray diffraction, showing nearly zero strain and a fixed indium ratio of 0.53. The deep levels in the layer have been characterized by Deep Level Transient Spectroscopy. The mean value of electron traps at 0.17 ± 0.03 eV below the conduction band minimum E C is assigned to the "localized" states of α 60°misfit dislocations; another broad electron trap with mean activation energies between E C − 0.17 ± 0.01 and 0.39 ± 0.04 eV, is identified as threading dislocation segments with "band-like" states. A high variation of the pre-exponential factor K T by 7 orders of magnitude is found for the latter when changing the filling pulse time, which can be explained by the coexistence of acceptor-like and donor-like states in the core of split dislocations in III-V materials. Furthermore, two hole traps at E V + 0.42 ± 0.01 and E V + 0.26 ± 0.13 eV are related to the double acceptor of the Ga(In) vacancy (V Ga/In 3-/2-) and 60°β misfit dislocations, respectively. Finally, the dislocation climbing mechanism and the evolution of the antisite defects As Ga/In are discussed for n-type In 0.53 Ga 0.47 As.

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“…Wosinski and Figielski [45] report an electron trap, EDI, at E, -0.68 eV by observations of DLTS on deformed GaAs. They first suggested it was associated with a Ga(g) partial of a 60" dislocation but more recently have produced evidence that it is due to the As(g) one [46]. They also suggest a hole trap at E , + 0.37eV associated with Ga dislocations.…”

Section: Discussionmentioning

confidence: 99%

First-Principles Calculations of Dislocations in Semiconductors

Jones¹,

Umerski²,

Sitch³

et al. 1993

Phys. Stat. Sol. (a)

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The structure of dislocations in semiconductors and the effect of their interaction with impurities are examined using an ab initio local density functional cluster method. This method is entirely free from any empirical parameters and takes account of the charge transfer between the impurity and the host as well as the forces acting on core atoms. It is found that dislocations in Si are strongly reconstructed but B, P, N, and As impurities destroy this reconstruction. C impurities have little effect. Oxygen atoms form clusters which aggregate near dislocation cores and also lead to strong pinning effects. These results explain the strong pinning effects attributed to these impurities. In GaAs, β‐dislocations are strongly reconstructed but α‐dislocations are not.

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Energy Levels and Electrical Activity of Dislocation Electron States in GaAs

Cited by 19 publications

References 12 publications

Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

First-Principles Calculations of Dislocations in Semiconductors

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