Energy Level of the 0 to + Charge Transition of Substitutional Manganese in Silicon

Abstract

An energy level of i^ + 0.38 eV related to the 0 to + charge transition of" substitutional manganese in silicon has been determined with a combination of deep-level-transient spectroscopy and ESR measurements. There is no evidence for ordinary amphoteric or negative-U behavior in the lower half of the band gap. This is the first identified energy level of a 3 d substitutional impurity in silicon.PACS numbers: 71.55.FrThere is a long tradition of exploring the properties of 3d (iron group) transition-metal point defects in silicon (see, for example, Weber 1 and references therein). Earlier calculations of the charge-transition levels including spin polarization and electronic relaxation were applied only to interstitial 3d elements. 2 Recently, advanced self-consistent calculations using a spin-unrestricted linear-muffin-tin Green's function method were carried out and expanded to substitutional 3delements. 3,4 Dependable data concerning the energy levels of the interstitial site could be determined by use of deep-level transient spectroscopy (DLTS) in combination with Hall and ESR measurements. 5 " 8 Regarding the substitutional 3d elements, however, no well-identified data were available so far. Thus the value of the 0 to + charge-transition level of substitutional manganese presented in this paper can serve as a first check of the validity of existing theories when applied to substitutional 3 d transition metals, and might give valuable hints for further investigations.To form substitutional manganese, samples were made from 1.7-ft cm /?-type silicon by application of a copper-manganese codiffusion technique as reported by Ludwig and Woodbury. 9 Successfully prepared samples show the typical ESR fingerprint [manganese nuclear spin (MNS)] of single positively charged substitutional manganese. 9 The X-band spin-resonance first-derivative absorption signal shown in Fig. 1 exhibits full cubic symmetry. The twofold spin degeneracy (5=1) is lifted by interaction with the manganesenuclear-spin system (/=- §-), leading to a 2x6 line splitting. The Hamilton parameters (# = 2.0259, A = -63.09x 10~4 cm -1 ) are different from those of a signal, possessing the same manifold and symmetry, which is attributed to negatively charged interstitial manganese. 9 All samples containing substitutional manganese produce both the MNS signal and a DLTS 10 peak exhibiting an energy level of 0.38 ±0.01 eV as derived from the Arrhenius plot of the DLTS spectra measured at different lock-in frequencies. Reference samples prepared with copper diffusion but without manganese codiffusion show no detectable 0.38-eV peak. On the other hand, samples could be produced that show the MNS signal and contain only the 0.38-eV transient with no other visible residual peaks. A correlation plot (Fig. 2) shows the unambiguous proportionality between the ESR signal intensity, obtained by double integration of the MNS signal, and the corresponding calibrated DLTS peak height. Each point is gained from an individual sample with a different concentration of s...

Recombination activity of manganese in p- and n-type crystalline silicon

“…There is a quite well-established body of knowledge from electron paramagnetic resonance (EPR), electron spin resonance (ESR) and deep-level transient spectroscopy (DLTS) studies on the structure, charge states and energy levels of Mn-related centres in silicon [4][5][6][7][8][9]. DLTS studies have also revealed information about the majority carrier capture cross sections of some of these levels [1].…”

Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

“…Finally, there are a few quantitative studies about the defect parameters of substitutional manganese in silicon, 6,[9][10][11] indicating that Mn s exists in three charge states, leading to an acceptor level in the upper-band-gap half and a donor level in the lower-band-gap half.…”

A Manganese Ions Ground State in Mn<sub>x</sub>Si<sub>1–x</sub>: Negative- <i>U</i> Properties Centre?

“…Transition metal impurities located in interstitial position in crystal lattice of silicon, as a role [8] [13] [14]. Sample preparation, in which main part impurity manganese ions located in unit of crystal lattice, is not ordinary task and we know few works only [15]- [17], in which authors have solved the given problem. Concentration of the point defects due to manganese impurity ions located in unit of crystal lattice, does not exceed 10 15 ions/cm 3 in the crystal and any magnetic interactions as a manganese-manganese as a free carrier-magnetic ion can be neglected.…”

“…Repeatedly, a question on electronic structure of substitution defects connected with manganese ions have returned only 30 years later, after from carrying out of the first experiments [15] [15] [16] have allowed to remove question on the magnetic moment value located on a magnetic ion (Figure 1, Figure 2). …”

“…defects is described by means of cubic spin-Hamiltonian very well [15] [23]. At the standard approach, when one considers only electrons located on a magnetic ion, it is not look possible to find the reasonable decision of the arising contradiction.…”