Energy Level Alignment and Interactions at Potential Contacts for Spin Injection into Organic Semiconductors

Grobosch, M.; Dörr, K.; Gangineni, R. B.; Knupfer, M.

doi:10.1002/adem.200800240

Cited by 8 publications

(4 citation statements)

References 49 publications

(71 reference statements)

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“…121. Later a 22 photoelectron spectroscopy (PES) study of the interface in LSMO/Alq 3 /Co SVs by Zhan et al [122] revealed the introduction of OS small molecule Alq 3 on LSMO creates a strong interface dipole of 0.9 eV that shifts the energy levels of Alq 3 with respect to the vacuum level.…”

Section: Lsmo -Os Interfacesmentioning

confidence: 99%

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Majumdar

Dijken

2013

J. Phys. D: Appl. Phys.

103

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Materials engineering at the nanoscale by precise control of growth parameters can lead to many unusual and fascinating physical properties. The development of pulsed laser deposition (PLD) 25 years ago has enabled atomistic control of thin films and interfaces and as such it has contributed significantly to advances in fundamental material science. One application area is the research field of spintronics, which requires optimized nanomaterials for the generation and transport of spin-polarized carriers. The mixed valence manganite La 1-x Sr x MnO 3 (LSMO) is an interesting material for spintronics due to its intrinsic magnetoresistance properties, electric-field tunable metal-insulator transitions, and half-metallic band structure. Studies on LSMO thin-film growth by PLD show that the deposition temperature, oxygen pressure, laser fluence, strain due to substrate-film lattice mismatch, and post-deposition annealing greatly influence the magnetic and electrical transport properties of LSMO. For spintronic structures, robust ferromagnetic exchange interactions and metallic conductivity are desirable properties. In this article, we review the physics of LSMO thin films and the important role that PLD played to advance the field of LSMObased spintronics. Some specific application areas including magnetic tunnel junctions (MTJs), multiferroic tunnel junctions (MFTJs), and organic spintronic devices are highlighted, and the advantages, drawbacks, and opportunities of PLD-grown LSMO for next-generation spintronic devices are discussed. IntroductionThe technology of spintronics uses the charge and spin of electrons to store information or to carry Pulsed laser deposition (PLD) [7] is a versatile thin-film deposition technique that can be used for nanoscale engineering of complex materials and interfaces. In correlated electron systems like LSMO, strong lattice-charge-spin coupling offers extensive control of magnetic and electronic transport properties by growth optimization and external actuation [8]. Besides intrinsic material parameters, spintronic elements often rely on band-structure effects at the interfaces between magnetic and non-magnetic thin films. Since the interface of LSMO is sensitive to bonding with other materials, charge transport due to polar discontinuities, and electric-field effects, it allows for the engineering of improved material responses and new functionalities. In this article, we review the use of PLD-grown LSMO films in spintronics. After an introduction to LSMO and a discussion on the control of LSMO properties using PLD, examples of LSMO

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Section: Lsmo -Os Interfacesmentioning

confidence: 99%

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Majumdar

Dijken

2013

J. Phys. D: Appl. Phys.

103

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“…La 0.7 Sr 0.3 MnO 3 , Co, and Fe) and different organic semiconductors have been published using PES. In this context of organic spintronic interfaces several OSC/electrode systems have been studied under different points of view: (i) interfaces between different OSCs and LSMO [85][86][87][88], Co [80,86,[88][89][90][91], and Fe [91,92] to obtain information about the charge transport across such interfaces, (ii) the effect of surface contaminations that often exists during device fabrication on the energy level alignment of organic spintronic relevant interfaces [33,34,66,87], and (iii) the role of a thin tunnel barrier of Al 2 O 3 between the OSCs and a Co contact [34,88,89] to overcome the conductivity mismatch problem.…”

Section: Interfaces Relevant For Organic Spin-tronic Devicesmentioning

confidence: 99%

“…To address the effect of a contamination layer at the electrode surface for organic spintronic devices we used combined X-ray and ultraviolet photoemission spectroscopy to investigate the resulting interface energeticss for CuPc/ LSMO and -6T/LSMO interfaces prior and after the exposure to ambient conditions [33,87,93]. Clean LSMO contact surfaces have been prepared by annealing in an oxygen atmosphere after a pre-treatment with acetone.…”

Section: Interfaces Relevant For Organic Spin-tronic Devicesmentioning

confidence: 99%

“…The contaminated LSMO substrates have been cleaned with an acetone treatment after the LSMO films have been exposed to ambient conditions representing a cleaning procedure which is also applied in the fabrication of organic spintronic devices using LSMO as bottom electrodes [47,70,74,75,83]. For further details of the applied in-situ and ex-situ cleaning procedures we refer the reader to previous publications [33,87]. From the top panels, the presence of a surface contamination layer on top of the LSMO films after the ex-situ treatment is clearly evident from the behaviour of the C1s and the O1s excitation feature.…”

Section: Interfaces Relevant For Organic Spin-tronic Devicesmentioning

confidence: 99%

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Electronic Properties of Organic Semiconductor/Electrode Interfaces: The Influence of Contact Contaminations on the Interface Energetic

Grobosch

Knupfer²

2011

TOAPJ

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During the last decades there has been considerable progress as regards the understanding of OSC/electrode interfaces. In this Review, we summarize recent work on the interface energetics influenced by the presence of electrode surface contamination due to the used ex-situ cleaning procedure prior the interface formation. Contact contaminations of the electrodes essentially affect the interface energetics in particular the interface parameters and therefore the performance of organic electronic devices. These new insights in the interface energetics at so-called realistic OSC/metal interfaces can help in the future to better design and optimize organic electronic devices such as OLEDs, OFETS, and OPVs. The reviewed investigations of the interface energeticss of interfaces relevant for organic spintronic devices, and in particular the effect of contamination layer induced changes in the energy level alignment of such interfaces lead to a significant progress in the understanding of the interfacial properties of organic spintronic relevant interfaces. They represent one step toward the description of spin transport in organic spintronic devices.

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The Spin Relaxation Time in a C60-Based Organic Spin Valve at Room Temperature

Liu

Xiao

Zhang

2013

J Supercond Nov Magn

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Energy Level Alignment and Interactions at Potential Contacts for Spin Injection into Organic Semiconductors

Cited by 8 publications

References 49 publications

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Electronic Properties of Organic Semiconductor/Electrode Interfaces: The Influence of Contact Contaminations on the Interface Energetic

The Spin Relaxation Time in a C60-Based Organic Spin Valve at Room Temperature

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Energy Level Alignment and Interactions at Potential Contacts for Spin Injection into Organic Semiconductors

Cited by 8 publications

References 49 publications

Pulsed laser deposition of La1−xSrxMnO3: thin-film properties and spintronic applications

Pulsed laser deposition of La1−xSrxMnO3: thin-film properties and spintronic applications

Electronic Properties of Organic Semiconductor/Electrode Interfaces: The Influence of Contact Contaminations on the Interface Energetic

The Spin Relaxation Time in a C60-Based Organic Spin Valve at Room Temperature

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Product

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Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications