Electronic Properties of Organic Semiconductor/Electrode Interfaces: The Influence of Contact Contaminations on the Interface Energetic

Grobosch, M.; Knupfer, M.

doi:10.2174/1874183501104010008

Cited by 14 publications

(3 citation statements)

References 104 publications

(181 reference statements)

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“…This contaminates the interface with environmental carbon, oxygen, and other impurities during sample handling, and this unintentional contamination of the device interfaces can consequently cause significant variation in the device properties. It has been also shown experimentally that introduction of this contamination changes the interface energetics significantly …”

Section: Introductionmentioning

confidence: 98%

“…It has been also shown experimentally that introduction of this contamination changes the interface energetics significantly. 15 Within the framework of the present study, we explored the possibility of growing an OS, which is of interest for spintronic applications, in a way different from the traditional routes to improve control over the interface properties and minimize the contamination effects. PLD is a versatile technique for stoichiometric deposition of materials in a controlled way in clean conditions and is generally used for inorganic metals and oxides.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The LSMO/OS interface was modified by different conditions such as high temperature in situ annealing before OS deposition and by insertion of the dielectric AlO x layer. High-temperature (500 °C) annealing of LSMO was performed under vacuum conditions (10 −6 mbar) to reduce contamination on the surface of the LSMO film and hence at the hybrid interface, as previously reported by Grobosch et al 15 The effect of removal of contamination and insertion of a seed layer on the structural and magnetic properties of the LSMO/rubrene interface were then thoroughly studied, and this knowledge could consequently lead to improved control of the device properties.…”

Section: ■ Introductionmentioning

confidence: 99%

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Interfacial Properties of Organic Semiconductor–Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition

Majumdar

Grochowska

Sawczak

et al. 2015

ACS Appl. Mater. Interfaces

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We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.

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Section: Introductionmentioning

confidence: 98%

Section: ■ Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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Interfacial Properties of Organic Semiconductor–Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition

Majumdar

Grochowska

Sawczak

et al. 2015

ACS Appl. Mater. Interfaces

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Organic Spin Valves: A Review

Devkota

Geng

Subedi

et al. 2016

Adv Funct Materials

102

106

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accelerated impressively and advanced to a range of materials and a number of techniques to verify the successful injection and transport of the SP carriers. [ 1,2,10,11 ] The effect has been realized in a variety of materials combinations such as FM fi lms, FM/anti-FM coupled layers, or FM semiconductors as the injection/detection electrodes and the metals, superconductors, inorganic semiconductors, organic semiconductors, and insulators including ferroelectric and topological insulators as the spacers. [ 1,2,[12][13][14][15][16][17][18] The GMR effect was extensively studied using non-magnetic metallic interlayer and its applications such as electric switching, magnetic recording, and sensors were suggested and employed. [ 1,2,16 ] However, all-metallic spintronic devices imposed restrictions in applications as they are characterized by short spin relaxation time (≈picosecond) and are not suitable for coherent spin manipulation. [ 1,2,19 ] To overcome these limitations, the spintronics community caught its attention towards hybrid devices with semiconductors (SCs) sandwiched in between the FM layers and continued advancing to a range of semiconducting materials. [ 2,14,[20][21][22] The organic semiconductors (OSCs) are among the youngest members of the spacer materials and were fi rst tested in the spintronic devices only about a decade ago. Nevertheless, OSC devices have been of continuously advancing research topics over the past three decades for their rich physics, fl exible chemi stry, cost effi ciency, and potential applications in new generations of electronic devices including organic light emitting diodes (OLEDs), [23][24][25] organic solar cells, [ 26,27 ] and organic fi eld effect transistor. [ 28,29 ] In fact, OLEDs have already revolutionized the modern display industry and spin-dependent devices such as organic spin valves (OSVs), OLED-based magnetic sensors, and spin-OLEDs are under intensive study to achieve their new avenues. [30][31][32] This increasing interest on organic electronics is for their several distinctions over inorganic counterparts. [19][20][21]33,34 ] Electronically, the band theory explains the electric transport in inorganic SCs while charge hopping is the main transport mechanism in the OSCs with much smaller carrier mobility. This is a favorable condition for large electron-hole pair recombination without the need of using a p-n junction structure. [23][24][25] Spintronically, the inorganic SCs contain heavy atoms giving rise to a large spin-orbit coupling (SOC), which is a response of the electron spin degree of freedom to its orbital environment. The strength of the SOC in solids depends upon the nature of orbital wave functions of electrons and the materials structure. [ 35 ] In case of hydrogenic wave-function-like electrons (s-orbital electrons), it is Organic spintronics is an emerging and potential platform for future electronic devices. Signifi cant progress has been made in understanding the spin injection, manipulation, and detection in organic spin valves in the p...

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Removal of nanoparticles on silicon wafer using a self-channeled plasma filament

et al. 2012

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Electronic Properties of Organic Semiconductor/Electrode Interfaces: The Influence of Contact Contaminations on the Interface Energetic

Cited by 14 publications

References 104 publications

Interfacial Properties of Organic Semiconductor–Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition

Interfacial Properties of Organic Semiconductor–Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition

Organic Spin Valves: A Review

Removal of nanoparticles on silicon wafer using a self-channeled plasma filament

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