Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide

Burke, E.A.; Dale, C.J.; Campbell, A.B.; Summers, G.P.; Stapor, W.J.; Xapsos, M.A.; Palmer, T.; Zuleeg, R.

doi:10.1109/tns.1987.4337456

Cited by 68 publications

(13 citation statements)

References 14 publications

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“…Hence the accuracy of the pion computations in Si is likely to be at least of this order. For GaAs the computations depend on one source [1]. The accuracy is likely to be similar to that in Si but with the added extrapolations and assumptions made here uncertainties of order a factor of 2 are not unlikely.…”

Section: Introductionmentioning

confidence: 88%

“…It is well known that the observed radiation damage to electronic components made from Gallium Arsenide is proportional to the Non-Ionising Energy Loss (NIEL) [1]. It is possible that this proportionality is also valid for GaAs particle detectors which h a v e been subjected to large doses of radiation from hadronic particles.…”

Section: Introductionmentioning

confidence: 99%

“…Such gamma radiation produces little NIEL [6]. In this paper we i n v estigate the 1 On leave from the Budker Institute for Nuclear Physics, Novosibirsk, Russia correlation between the NIEL from strongly interacting particles and the performance of GaAs detectors as measured by their charge collection eciency (CCE).…”

Section: Introductionmentioning

confidence: 99%

“…For energetic charged particles in GaAs calculations only exist for protons up to a kinetic energy of 1 GeV [1]. To extend the range of these computations we assume that the values in GaAs will follow the same variation with energy as those in Silicon so that…”

Section: Introductionmentioning

confidence: 99%

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Radiation damage due to NIEL in GaAs particle detectors

Chilingarov

Meyer

Sloan

1997

Nuclear Instruments and Methods in Physics Research Section A:

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The Non Ionizing Energy Loss (NIEL) for fast neutrons, protons and pions in GaAs has been deduced from published calculations. The values are then used to search for a correlation between the observed reduction of charge collection eciency (CCE) in GaAs particle detectors with the radiation dose from NIEL. A correlation is demonstrated to be present for detectors made from a wide range of material. The implications for the performance of GaAs detectors at the Large Hadron Collider (LHC) are discussed.

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Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Radiation damage due to NIEL in GaAs particle detectors

Chilingarov

Meyer

Sloan

1997

Nuclear Instruments and Methods in Physics Research Section A:

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“…[7] and also by others in Refs. [8][9][10] for different particles and energies. Nuclear interactions include elastic and inelastic collisions.…”

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confidence: 99%

Point and extended defects in irradiated silicon and consequences for detectors

Lazanu

Ciurea

Lazanu

2009

Phys. Status Solidi (c)

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The interactions by which ions lose their energy in silicon are investigated at the microscopic level. This theoretical study put in evidence that the ionization could also represent a source of structural defects, and, contrary to the processes initiated by elementary particles, could generate extended primary defects, as, e.g. four‐fold coordinated defects, due to the simultaneous breaking of bonds for more neighbouring atoms in the lattice in a single interaction, in the ionisation core. The average energy transferred per atom is calculated, and also the energy spent by ionisation. The time dependence of the temperature in the ionisation core is derived in some simplifying assumptions. These contributions were not considered yet in the studies of degradation of silicon detectors in radiation fields and could account for the discrepancies observed between models and measurements at microscopic versus device level for hadrons and ions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The Broad Midgap Deep-Level Transient Spectroscopy Band in Proton (65 MeV) and Fast Neutron-Irradiated n-GaAs

Brudnyi

Градобоев

Peshev

1999

phys. stat. sol. (b)

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This article examines the importance of conflict resolution skills and techniques when managing the complex relationships and interdependence necessary for large‐scale construction projects. Partnering between multiple public and private organizations is often required in order for these projects to succeed. The authors examine the specific partnering skills that contributed to the success of the Woodrow Wilson Bridge project.

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Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide

Cited by 68 publications

References 14 publications

Radiation damage due to NIEL in GaAs particle detectors

Radiation damage due to NIEL in GaAs particle detectors

Point and extended defects in irradiated silicon and consequences for detectors

The Broad Midgap Deep-Level Transient Spectroscopy Band in Proton (65 MeV) and Fast Neutron-Irradiated n-GaAs

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