Radiation damage due to NIEL in GaAs particle detectors

Chilingarov, A.; Meyer, Jacques; Sloan, T.

doi:10.1016/s0168-9002(97)00638-4

Cited by 34 publications

(22 citation statements)

References 6 publications

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“…N a and A 0 are Avogadro's numberand the atomic weight of the material, respectively. NIEL calculations are available for dierent particles both for Si [41,44,45,46] and for GaAs [41,45,47], although for charged pions, which dominate the radiation environment in the SCT near the interaction point, and, to a smaller extent for protons, these calculations presently have rather large uncertainties [48]. Table 1 summarizes some values of the NIEL in GaAs.…”

Section: Displacement Damage and Non{ionizing Energy Lossmentioning

confidence: 99%

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Beringer

Borer

Mommsen

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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We present the nal results of radiation hardness and life time studies of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs). Following the encouraging results obtained in a previous life time test of neutron irradiated LEDs, we built an automatic measurement system in order to make long term tests with a large numberof irradiated devices feasible. After irradiating about 170 LEDs from two dierent manufacturers and about 140 VCSELs with neutron and proton uences as high (and in some cases about twice as high) as those expected at the inner tracker of ATLAS, we report on the radiation damage, the conditions required for its annealing, and we present post{irradiation failure rates for LEDs and VCSELs. The life time after irradiation was investigated by operating the diodes at an elevated temperature of 50 C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From our measurements we calculate radiation damage constants and we nd a proton{ to{neutron damage ratio of 3:2 0:1 in GaAs for 24 GeV protons and for the neutrons with a peak energy of about 1 MeV available at the RAL ISIS facility. This result is in excellent agreement with recent NIEL calculations and provides an important c heck of the NIEL hypothesis.

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Section: Displacement Damage and Non{ionizing Energy Lossmentioning

confidence: 99%

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Beringer

Borer

Mommsen

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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“…The use of 24 GeV/c protons for studying the SEU effects in the ATLAS innerdetector's opto-electronics is justified by similar magnitude of the SEU formation relevant nonionizing cross-sections of 300 MeV/c pions, which dominate the particle flux in the ATLAS detector, and those of 24 GeV/c protons, both in Si and in GaAs [11]. The SEU data was taken independently on four optical channels of a PiN-photodiode array connected to a DORIC receiver chip.…”

Section: Single-event-upset Measurement Runmentioning

confidence: 99%

Time-Resolved Studies of Single-Event-Upset effects in Optical Data Receiver for the First LHC Upgrade Phase of the ATLAS Pixel Detector.

Ziolkowski¹

2012

Proceedings of 10th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors — Po

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1 Speaker PoS(RD11)038 Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.http://pos.sissa.it An optical receiver board housing an amplifier-and-decoding ASIC designed in 130 nm CMOS process for use with bi-phase-mark encoded input signals, coupled to a PiN-photodiode array, was exposed to a proton beam of 24 GeV/c momentum at CERN. At the same time a reference receiver board containing the same ASIC but coupled to an electrical input-signal-source was also exposed to the proton beam. The 40 MHz clock and 40 Mbps data signals encoded together and supplied to the devices under test, were restored directly on both boards and then transmitted back to the counting room for on-line checking of consistency. In the case of a data-bit error or a missing clock transition, indicating an occurrence of a SEU, a sequence of time aligned data-bits and corresponding clock-states were recorded and in part as oscilloscope-waveforms for off-line analyses. Measurements were performed using a custom-developed FPGA-based DAQ system, for input signals covering a certain range of optical and electrical amplitudes. We present results obtained from the 2010 run at the CERN irradiation facility, including the SEU rate and cross-section dependence on input signal amplitude, for various types of effects on clock and data consistency, along with the time-resolved structure of the SEU incidents.

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“…We use the Non Ionizing Energy Loss (NIEL) scaling hypothesis to estimate the SLHC fluences [1][2]. The silicon trackers will be consisted of a pixel detector followed by a strip detector.…”

Section: Radiation Damage In Vcsel and Pinmentioning

confidence: 99%

Study of the Radiation-Hardness of VCSEL/PIN

Gan¹

2010

Proceedings of 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors — PoS

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The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

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Radiation damage due to NIEL in GaAs particle detectors

Cited by 34 publications

References 6 publications

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Time-Resolved Studies of Single-Event-Upset effects in Optical Data Receiver for the First LHC Upgrade Phase of the ATLAS Pixel Detector.

Study of the Radiation-Hardness of VCSEL/PIN

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