Energetically consistent modeling of passive memelements

Ochs, Karlheinz; Solan, Enver

doi:10.1016/j.aeue.2018.05.023

Cited by 6 publications

(2 citation statements)

References 22 publications

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“…Examples can be found in a variety of applications across physical disciplines, such as in biomimetics in the study of memcapacitance effects in synthetic cell membranes [20]. Analogous phenomena are observed in MEMS exploiting state changes in inductance, which result from the quadratic dependence of the magnetic force on the excitation current [81,82]. On the other hand, in memristive systems based on thermal heating due to flowing current, the dynamics are determined by thermal power, i.e., by the quadratic dependence of voltage or current excitation.…”

Section: Extended Hoe: Phl Type Evaluationmentioning

confidence: 92%

Extended Higher-Order Elements with Frequency-Doubled Parameters: The Hysteresis Loops Are Always of Type II

Biolek

Biolková

et al. 2023

Sensors

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Current MEMS (Micro Electro Mechanical Systems) can be modeled by state-dependent elements that exhibit hysteretic behavior. Examples include capacitors and inductors whose capacitances and inductances are dependent on the instantaneous state of the electromechanical system, resistors whose resistances exhibit temperature changes when the elements are actually heated, etc. Regardless of the physical background, such hysteresis manifestations can be studied uniformly in the broader framework of generic and extended higher-order elements, in which a classification of hysteretic loops into types I and II is established. The loop type is an important dynamical parameter of an element, having the potential to indicate, for example, its (in)volatility. Thus far, there is no reliable criterion to determine the type of steady loop from the defining relations of an element. This work reports on one special class of extended elements that produces type II loops under all circumstances. The paper presents hitherto unpublished connections between the frequency-doubling parameters of an element and the type of its hysteresis loop. The new findings are expressed by several theorems that allow the type of hysteresis to be inferred from the frequency behavior of the element parameter or state, and vice versa. These procedures are demonstrated with examples and verified by computer simulations.

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Section: Extended Hoe: Phl Type Evaluationmentioning

confidence: 92%

Extended Higher-Order Elements with Frequency-Doubled Parameters: The Hysteresis Loops Are Always of Type II

Biolek

Biolková

et al. 2023

Sensors

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“…The first memristor produced by Hewlett Packard (HP) labs in 2008 comprised 50 nm of TiO 2 , which was inserted between two 5 nm electrodes (Pt). A nanoscale physical memristor has unique characteristics which can be utilized to enhance the computer architecture and electronic systems [36,37]. The simple structure of this device consists of two layers of TiO 2 located between two platinum electrodes.…”

Section: Memristor Modelmentioning

confidence: 99%

Design and simulation of high-speed and low-power memcapacitor-based nonvolatile static cells using FinFET transistors

Abbasi¹,

Setoudeh²,

Tavakoli³

et al. 2021

Semicond. Sci. Technol.

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Metal-oxide-semiconductor field-effect transistors (MOSFETs) are mostly used in the design of static cells. MOSFETs have disadvantages, such as increased leakage current, reduced reliability, increased short-channel effects, and large changes in parameters. In this paper, fin field-effect transistors (FinFETs) are used instead of MOSFETs. Memristive elements are used in the design of a nonvolatile static cell. The memory cell presented here includes a static random access memory (SRAM) core (a 6T FinFET cell in this case) with two memristors and two memcapacitors, thus making a 6T FinFET SRAM cell-based 2R2C. The designed nonvolatile memory cell performed better in terms of power consumption, energy, areal factors, static noise margin, write margin, and read/write propagation delay than other designs presented so far. The figures of merit of the proposed design are also substantially improved, making the presented scheme a better approach for 'read-write' operations. In this paper, we have tried to keep the load capacitance (C load ) as small as possible to improve the power consumption and the write and read delays, because the capacitor charge has a direct relationship with the cell's power consumption.

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Nonlinear analysis and minimum L2-norm control in memcapacitor-based hyperchaotic system via online particle swarm optimization

Setoudeh

Sedigh

2021

Chaos, Solitons & Fractals

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Energetically consistent modeling of passive memelements

Cited by 6 publications

References 22 publications

Extended Higher-Order Elements with Frequency-Doubled Parameters: The Hysteresis Loops Are Always of Type II

Extended Higher-Order Elements with Frequency-Doubled Parameters: The Hysteresis Loops Are Always of Type II

Design and simulation of high-speed and low-power memcapacitor-based nonvolatile static cells using FinFET transistors

Nonlinear analysis and minimum L2-norm control in memcapacitor-based hyperchaotic system via online particle swarm optimization

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