Energetic ion irradiation of American diamond in a plasma focus device and characterization of irradiated material

Synthesis of nano-crystalline zirconium aluminium oxynitride (ZrAlON) composite films by dense plasma Focus device

“…The surface morphology of the composite film deposited with 40 Focus shots changes significantly as it becomes rougher and consists of bigger size particle agglomerates due to enhanced irradiation dose. Each Focus shot results in exposure of the sample with pulsed energetic ion beam (with about hundred ns pulse duration having ions in the energy range 38 keV-1.6 MeV) which results in transient sample surface heating up to several thousand degrees centigrade in a very short time and is immediately followed by fast melting and re-solidification [17]. Thus the ion irradiation process is equivalent to the transient thermal annealing which results in rearrangement of atoms in surface layer.…”

“…Plasma processing of different materials including ion implantation [14], surface modification [15], thermal surface treatments [16], thin films deposition [17] and deposition of fullerene films on silicon [18] has been achieved using this device. The aim of this work is to examine the ion assisted deposition of nano-crystalline multiphase (ZrAlON) composite films on zirconium substrate by employing dense plasma Focus device.…”

Role of charge particles irradiation on the deposition of AlN films using plasma focus device

“…The electrode assembly is housed in a stainless steel vacuum chamber which is evacuated by a turbo pump attached with rotary vane pump down to the pressure of 10 À 4 mbar and is then filled with nitrogen gas at an optimum pressure of 1.25 mbar. The details of PF device can be found elsewhere [16,26,[30][31][32]. A BPX65 photodiode detector placed at 10 cm from the anode tip is used to characterize the nitrogen ions emitted during the radial collapse phase of PF operation.…”

Growth and Study of Plasma Assisted Nanostructured Hard Tantalum Nitride Thin Films

“…The estimated ranges of ion energy and ion number density are from 40 keV to 1.2 MeV and 9.7 9 10 19 to 1.8 9 10 19 m -3 , respectively. This ion flux consequences in the heating of surface up to several thousand degrees centigrade in a very short time immediately followed by fast melting, rapid cooling and re-solidification [39]. The ion irradiation process is, therefore, equivalent to the transient thermal annealing, due to which, atoms on the surface layer are rearranged, hence developing new phases [40].…”