Endurance Enhancement and High Speed Set/Reset of 50 nm Generation HfO₂ Based Resistive Random Access Memory Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme

Abstract

This paper proposes a verify-programming method for the resistive random access memory (ReRAM) cell which achieves a 50-times higher endurance and a fast set and reset compared with the conventional method. The proposed verify-programming method uses the incremental pulse width with turnback (IPWWT) for the reset and the incremental voltage with turnback (IVWT) for the set. With the combination of IPWWT reset and IVWT set, the endurance-cycle increases from 48 ×103 to 2444 ×103 cycles. Furthermore, the measured data retention-time after 20 ×103 set/reset cycles is estimated to be 10 years. Additionally, the filamentary based physical model is proposed to explain the set/reset failure mechanism with various set/reset pulse shapes. The reset pulse width and set voltage correspond to the width and length of the conductive-filament, respectively. Consequently, since the proposed IPWWT and IVWT recover set and reset failures of ReRAM cells, the endurance-cycles are improved.

Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development

“…An increase in the number of rewritable cycles may be realized depending on the verification method. 74) ReRAMs can be applied to SCMs by utilizing the high-speed operation of ReRAMs, as well as their wear leveling and error correction functions, depends on the circuit-design technology developed in the future.…”

ReRAM technology; challenges and prospects

“…Actually, with flattening of the electrode, both the uniformity of resistance states and switching endurance of the memory device were significantly improved [19]. To develop the memory-data management algorithms, such as the verify-programming method, will certainly promote the practical development of ReRAM with higher stability and reliability [30].…”