Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development

Abstract

Nanoelectronics is a fundamental technology that supports industry and society. Recently, new nanomaterials and nanostructures have been incorporated into device fabrication processes, leading to significant developments in nanoelectronics. In this review, the current status and future prospects of the research and development of functional oxide devices, in which a phase transition in strongly correlated electron systems and a current-induced redox reaction are utilized, are discussed as typical examples of recent developments. In addition, a scheme for research and development is proposed to accelerate the development of ecosystem in the field of nanoelectronics by systematizing the technologies related to new materials and structures.

Oxide Electronics and Vanadium Dioxide Perspective: A Review

“…Even earlier, in the work on the electron injection effect upon the MIT [44] we have also discussed this possibility on the basis of the MTFET idea introduced in [42]. Since about 2010 the research in this area has noticeably intensified (see [106]- [118]) and a lot of really encouraging results have been obtained, the review of which is presented below; some preliminary overviews one can also find in the recent surveys [23], [46], [116], [117].…”

“…The MIT ideology is also sometimes involved to explain the properties of the structures and the memory switching mechanism therein [27]. In any case, the memory switching phenomenon seems to be associated with the ion transport [23], [24], [26], [28]. It is also appropriate to mention here the works discussing the memory effects in a material with MIT (vanadium dioxide) associated with the presence of hysteresis in the temperature dependence of conductivity [30], [31].…”

“…Note that in contrast to the first two of the above listed directions of oxide electronics, there are almost no sufficiently detailed reviews in the literature on the topic of MTFET, except, perhaps, for the works [23] and [46]. This fact was one of the motives for writing this paper, and Section IV presents therefore the latest results and key achievements in this area.…”

Supramolecular Structures for the Increase of the Faradey and Nonfaradey Efficiency

“…Сьогоднішній бурхливий розвиток електромобілебудування і нетрадиційної е н е р г е т и к и [ 1 , 2 ] , в р а ж а юч і у с п і х и наноелектроніки і спінтроніки [3] з особливою гостротою вирізнили глибинні проблеми, які лежать в основі принципових суперечностей між всезростаючими потребами новітніх схемотехнічних рішень та можливостями сучасних традиційних технологій автономних пристроїв генерування, перетворення і накопичення енергії [4]. Існуючи сьогодні ос-новні електрохімічні системи із зазначеної га-лузі технологій були розроблені більш як сто-ліття тому, а досягнутий прогрес з тих пір може бути віднесений хіба що до започаткування технології так званих конденсаторів з подвій-ним електричним шаром чи суперконденсато-рів (1953 р.)…”

Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3thin films deposited on CaTiO3-buffered silicon substrates

“…The integration of these epitaxial functional oxides with silicon substrates offers significant opportunities for applications. [1][2][3][4][5][6][7][8] Among them are micro-electromechanical systems (MEMS) based on epitaxial piezoelectric layers [9][10][11][12][13] and suspended bolometers based on epitaxial La 0.7 Sr 0.3 MnO 3 thin films. 14 The use of silicon substrates greatly facilitates the fabrication of MEMS and suspended bolometers, where three-dimensional structures can be efficiently realized by volume silicon micromachining using conventional techniques such as isotropic etching in alkaline solutions (KOH, TMAH, etc.)…”