Endpoint Detection in Low Open Area TSV Fabrication Using Optical Emission Spectroscopy

Gu, Ja Myung; Thadesar, Paragkumar A.; Dembla, Ashish; Bakir, Muhannad S.; May, G.S.; Hong, Sang Jeen

doi:10.1109/tcpmt.2014.2323070

Cited by 10 publications

(1 citation statement)

References 28 publications

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“…We mean the studies, the purpose of which is using the OES to determine the relationship between the parameters of the etching and the optimal ratio of emission intensities of carbon and uorine lines in terms of obtaining the vertical etching pro le in silicon. So far OES in situ was used only to determine any parameters of plasma discharge during etching 20,21 or to detect the end point of etching process 22,23 .…”

Section: Introductionmentioning

confidence: 99%

In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures

Осипов

Gagaeva

Speshilova

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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In this work, we studied the influence of technological parameters of plasma chemical etching of silicon on silicon etching rate, photoresist etching rate, etching selectivity of silicon in relation to a photoresist, and sidewall angle of etched structures. It was found that the silicon etching rate increases with raising percentage of SF6 in the gas mixture (25%–50%), pressure (1–2.5 Pa), high-frequency (HF) power (1000–2000 W), and bias voltage module (15–75 V) and decreases with a raising total flow rate of the gas mixture (5–35 SCCM) due to the increasing passivation efficiency of the sample surface. The etching selectivity increases with a raising percentage of SF6 and pressure and decreases with the raising total gas flow rate, HF power, and bias voltage module due to different influences of technological parameters on the photoresist etching rate. In addition, based on the obtained results, a common regularity between the sidewall angle and the optical emission spectra was revealed. The method of in situ diagnostics was proposed, namely, controlling the sidewall angle by a ratio of emission intensities of a carbon line (517.1 nm) to a fluorine line (685.8 and 703.9 nm) designated as parameter X. It was found that the sidewall angle of etched structures takes certain values depending on the value of the X parameter. The ranges of X values at which the sidewall angle is acute, right, and obtuse were estimated. So, at values of X from ≈0.15 to ≈0.35, an acute angle (from 81° ± 0.5° to 89° ± 0.5°) is obtained; at X from ≈0.35 to ≈0.42, a right angle is obtained (90° ± 0.5°); and at X from ≈0.42 to ≈0.75, the values of the sidewall angle are in the range from 91° ± 0.5° to 94° ± 0.5°, no matter which technological parameters were set. Experiments were conducted for etching windows with linear dimensions from 0.5 × 20 to 2 × 20 mm.

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Section: Introductionmentioning

confidence: 99%

In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures

Осипов

Gagaeva

Speshilova

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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Spectral clustering algorithm for real‐time endpoint detection of silicon nitride plasma etching

Lee

Choi

Kim

et al. 2023

Plasma Processes & Polymers

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The spectral clustering algorithm (SCA) is developed for endpoint detection (EPD) of Si 3 N 4 plasma etching using optical emission spectroscopy (OES). OES signals are collected in real-time and filtered using discrete wavelet transform (DWT).The SCA using 3648 full-spectrum wavelengths with DWT filtering improves signal-to-noise ratio (SNR) by 2.78 times compared to single-wavelength related to N 2 molecule in 1.0% relative area etching. The wavelengths

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Through-Silicon Vias: Drivers, Performance, and Innovations

Thadesar

Alapati

et al. 2016

IEEE Trans. Compon., Packag. Manufact. Technol.

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Endpoint Detection in Low Open Area TSV Fabrication Using Optical Emission Spectroscopy

Cited by 10 publications

References 28 publications

In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures

In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures

Spectral clustering algorithm for real‐time endpoint detection of silicon nitride plasma etching

Through-Silicon Vias: Drivers, Performance, and Innovations

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