Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET

Li, Xueqing; Sampson, John J.; Khan, Asif Islam; Ma, Kaisheng; George, Sumitha; Aziz, Ahmedullah; Gupta, Sumeet Kumar; Salahuddin, Sayeef; Chang, Meng-Fan; Datta, Suman; Narayanan, Vijaykrishnan

doi:10.1109/ted.2017.2716338

Cited by 76 publications

(48 citation statements)

References 30 publications

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“…Through the addition of a suspended metal membrane to the solid-state MOS transistor, SG-MOSFETs achieve the reduced SS. [86,87] Moreover, to achieve superior electric performance, they can be combined with other FETs, such as 2DFETs, [88][89][90] FinFETs, [61,62] and TFETs. [20] However, complicated processes in fabrication and the problem of reliability limit the practical application of these devices.…”

Section: Ncfet To the Rescuementioning

confidence: 99%

Ferroelectric Negative Capacitance Field Effect Transistor

Wang

et al. 2018

Adv Elect Materials

110

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such as steep subthreshold swing (SS), high switching ratio (I on /I off ), adjustable hysteresis, compatibility with standard semiconductor fabrication processes, and environmental friendliness, promotes NCFET to be a promising candidate to lower power consumption and solve the heat problem in ULSI.As early as the 1960s, the concept of negative capacitance (NC) was proposed in amorphous semiconductor chalcogenides thin film, [25,26] then the NC effect was observed in several devices, such as p-n junctions, [27,28] Schottky diodes, [29,30] metal-insulator-metal diodes, [31] and others. [32][33][34][35] Concretely, the NC effect occurs when the reciprocal of the second derivation of potential energy U with respect to the ferroelectric polarization charge Q F is negative, which is usually achieved during the switching process of ferroelectric polarization. [36,37] NCFET achieves steep SS through the NC voltage amplification effect by adding a ferroelectric layer into the transistor gate stack. [22] NCFET simulation methods vary according to the types of transistor gate structures-metal ferroelectric semiconductor field-effect transistor (MFSFET), metal ferroelectric insulator semiconductor field-effect transistor (MFISFET), and metal ferroelectric metal insulator semiconductor field-effect transistor (MFMISFET). However, the basic principle is to realize a match between the channel charge Q and the ferroelectric polarization charge P, [38][39][40][41][42] no matter what the specific gate structure is.Furthermore, the influencing factors of NCFET's electrical properties have been qualitatively analyzed and summarized according to numerous simulation results. Commonly, a tradeoff exists between SS and hysteresis, [22] and we can design and manipulate the gate structure, [41] ferroelectric thickness (t Fe ), [22] ferroelectric material parameters, [38] silicon doping concentration, [39,43] temperature, [44] work frequency, [45][46][47][48] and high-κ dielectric [23,49,50] to optimize the electrical performance of NCFET and meet specific practical application requirement.The experimental researches on NCFETs can be mainly classified into three categories based on various kinds of ferroelectrics. First, the NCFET based on organic ferroelectric-poly(vinylidene difluoride-trifluoroethylene)[P(VDF-TrFE)], has been experimentally demonstrated, and achieves minimum SS (SS min ) = 13 mV dec −1 with small hysteresis. [51,52] Second, the NCFET based on lead zirconate titanate (PZT), a type of inorganic perovskite-type ferroelectric, exhibits hysteretic switching with With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralargescale integration (ULSI) is limited by the physical barrier termed "Boltzmann Tyranny." Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field-effect transistor (Fe-NCFET) is proposed in order to reduce the subthresho...

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Section: Ncfet To the Rescuementioning

confidence: 99%

Ferroelectric Negative Capacitance Field Effect Transistor

Wang

et al. 2018

Adv Elect Materials

110

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“…Since, backup occurs only when the power is about to go OFF, DNVFF-2 mitigates the large operational energy (EOP) cost incurred in DNVFF-1. DNVFF-2 employs a B/R module with 5 transistors including 2 D-FEFETs unlike [10] which uses 8. Transistors M1 and M2 connect the B/R module to the slave latch.…”

Section: Circuit Designmentioning

confidence: 99%

“…The recent advent of ferroelectric transistors (FEFETs) with the possibility to integrate FE in the gate stack of a transistor has led to a new era for logic-memory synergy [9]. Lately, FEFET based NVFFs have been proposed with a potential to overcome the challenges in FE capacitor based designs [10][11]. The innovation stems from utilizing the three-terminal non-volatile transistor to improve distinguishability and simplify the restore operation.…”

Section: Introductionmentioning

confidence: 99%

“…The contributions of this paper are:  We introduce D-FEFET and extensively explain its characteristics including run-time modulation of hysteresis.  We utilize D-FEFET in the design of NVFF with fully automatic backup without any B/R module (DNVFF-1), demonstrating significantly lower area and backup/restore energy compared to previous FEFET based NVFF [10].  We propose another NVFF (DNVFF-2) with need-based backup enabled by compact low power B/R module, showing lower area and backup energy/speed compared to [10].…”

Section: Introductionmentioning

confidence: 99%

“… We utilize D-FEFET in the design of NVFF with fully automatic backup without any B/R module (DNVFF-1), demonstrating significantly lower area and backup/restore energy compared to previous FEFET based NVFF [10].  We propose another NVFF (DNVFF-2) with need-based backup enabled by compact low power B/R module, showing lower area and backup energy/speed compared to [10].  We carry out a system-level analysis of the proposed NVFFs for intermittently-powered systems.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dual Mode Ferroelectric Transistor based Non-Volatile Flip-Flops for Intermittently-Powered Systems

Thirumala

Raha

Jayakumar

et al. 2018

Proceedings of the International Symposium on Low Power Electronics and Design

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In this work, we propose dual mode ferroelectric transistors (D-FEFETs) that exhibit dynamic tuning of operation between volatile and non-volatile modes with the help of a control signal. We utilize the unique features of D-FEFET to design two variants of non-volatile flip-flops (NVFFs). In both designs, D-FEFETs are operated in the volatile mode for normal operations and in the non-volatile mode to backup the state of the flip-flop during a power outage. The first design comprises of a truly embedded non-volatile element (D-FEFET) which enables a fully automatic backup operation. In the second design, we introduce need-based backup, which lowers energy during normal operation at the cost of area with respect to the first design. Compared to a previously proposed FEFET based NVFF, the first design achieves 19% area reduction along with 96% lower backup energy and 9% lower restore energy, but at 14%-35% larger operation energy. The second design shows 11% lower area, 21% lower backup energy, 16% decrease in backup delay and similar operation energy but with a penalty of 17% and 19% in the restore energy and delay, respectively. System-level analysis of the proposed NVFFs in context of a state-of-the-art intermittently-powered system using real benchmarks yielded 5%-33% energy savings. CCS ConceptsHardware➝ Emerging Technologies ➝Analysis and design of emerging devices and systems.

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Enabling Distributed Intelligence with Ferroelectric Multifunctionalities

et al. 2021

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Distributed intelligence involving a large number of smart sensors and edge computing are highly demanded under the backdrop of increasing cyber-physical interactive applications including internet of things. Here, the progresses on ferroelectric materials and their enabled devices promising energy autonomous sensors and smart systems are reviewed, starting with an analysis on the basic characteristics of ferroelectrics, including high dielectric permittivity, switchable spontaneous polarization, piezoelectric, pyroelectric, and bulk photovoltaic effects. As sensors, ferroelectrics can directly convert the stimuli to signals without requiring external power supply in principle. As energy transducers, ferroelectrics can harvest multiple forms of energy with high reliability and durability. As capacitors, ferroelectrics can directly store electrical charges with high power and ability of pulse-mode signal generation. Nonvolatile memories derived from ferroelectrics are able to realize digital processors and systems with ultralow power consumption, sustainable operation with intermittent power supply, and neuromorphic computing. An emphasis is made on the utilization of the multiple extraordinary functionalities of ferroelectrics to enable material-critical device innovations. The ferroelectric characteristics and synergistic functionality combinations are invaluable for realizing distributed sensors and smart systems with energy autonomy.

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Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET

Cited by 76 publications

References 30 publications

Ferroelectric Negative Capacitance Field Effect Transistor

Ferroelectric Negative Capacitance Field Effect Transistor

Dual Mode Ferroelectric Transistor based Non-Volatile Flip-Flops for Intermittently-Powered Systems

Enabling Distributed Intelligence with Ferroelectric Multifunctionalities

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