Emitter-collector shorts in bipolar devices

Barson, F.

doi:10.1109/jssc.1976.1050767

Cited by 26 publications

(8 citation statements)

References 10 publications

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“…The excess junction reverse current is reduced, but another junction failure is observed in association with crystal defectivity, consisting of a source-to-drain leakage of transistors due to pipeline defects. Pipeline defects have been widely reported in bipolar devices [2] and recently also in complementary-metal-oxide-semiconductor (CMOS) technology [3,4]. This failure is explained by an anomalous dopant diffusion along the defect, making the defect act as a resistive path.…”

Section: Introductionmentioning

confidence: 99%

Crystal defects and junction properties in the evolution of device fabrication technology

Mica

Polignano

Carnevale

et al. 2002

J. Phys.: Condens. Matter

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In this paper, the correlation between dislocation density and transistor leakage current is demonstrated. The stress evolution and the generation of defects are studied as a function of the process step, and experimental evidence is given of the role of structure geometry in determining the stress level and hence defect formation. Finally, the role of high-dose implantations and the related silicon amorphization and recrystallization is investigated.

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Section: Introductionmentioning

confidence: 99%

Crystal defects and junction properties in the evolution of device fabrication technology

Mica

Polignano

Carnevale

et al. 2002

J. Phys.: Condens. Matter

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“…2, it can be seen that the current can only come from one or both of the bipolar transistors, Q 1 and Q 2 . One feasible explanation for this behaviour is collector-emitter (CE) leakage current from pipe formation or surface inversion in the base [2]. Although surface inversion in bipolar devices is uncommon in modern processes, a reduced threshold voltage due to the unusually high operating temperature of the devices under test might trigger the phenomenon.…”

Section: Failure Modesmentioning

confidence: 99%

High-temperature characterisation and analysis of leakage-current-compensated, low-power bandgap temperature sensors

Nilsson

Borg

Johansson

2017

Analog Integr Circ Sig Process

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This paper analyses leakage current compensation techniques for low-power, bandgap temperature sensors. Experiments are conducted for circuits that compensate for collector-substrate, collector-base, bodydrain and source-body leakage currents in a Brokaw bandgap sensor. The sensors are characterised and their failure modes are analysed at temperatures from 60 to 230 C. It is found that the most appropriate compensation circuit depends on the accuracy requirements of the application and on whether a stable reference voltage is required by other parts of the circuit. Experiments show that the power consumption is dominated by leakage current at high temperatures. One type of sensor was seen to consume 260 nW at 60 C, 2:1 lW at 200 C and 14 lW at 230 C. This work is motivated by the need to accurately monitor the temperature of power semiconductors in order to predict emerging faults in power semiconductor modules, a task for which cheap, single-chip, low-power, hightemperature, wireless bandgap temperature sensors are appropriate.

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“…[112][113][114]120 The large number of variables noted above also contributed to the significant variability of carrier lifetime with the ''same'' dislocation density …”

Section: -114mentioning

confidence: 99%

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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Emitter-collector shorts in bipolar devices

Cited by 26 publications

References 10 publications

Crystal defects and junction properties in the evolution of device fabrication technology

Crystal defects and junction properties in the evolution of device fabrication technology

High-temperature characterisation and analysis of leakage-current-compensated, low-power bandgap temperature sensors

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

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