Emission and Coupling Properties of 1.3 μm V-Groove Edge-Emitting LEDs

Abstract

InGaAsP/InP edge-emitting LEDs for the 1.3 μιη region were fabricated using the V-groove technique. Varying the width and the length of the active stripe the diodes were optimized with respect to the optical power coupled into a standard graded index fiber at a constant injection current of 100 mA. An optical power of 70 μ\ν can be coupled. The risetime and falltime is 2 ns. RZ modulation of 170 Mbit/s is possible without bias current.