EMI generation characteristics of SiC diodes: Influence of reverse recovery characteristics

Walder, Sam; Yuan, Xibo; Oswald, Niall

doi:10.1049/cp.2014.0447

Cited by 3 publications

(1 citation statement)

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“…New wide bandgap semiconductor technology of silicon carbide (SiC) [13][14][15][16][17], and gallium nitride (GaN) [18][19][20][21][22] could be used to address the reverse recovery diode current problem. Due to their construction, SiC and GaN have no reverse recovery charges [20,21].…”

Section: Problem With Using Gan As a Secondary Rectifiermentioning

confidence: 99%

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

et al. 2022

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This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, commercially available GaN is limited to only a 650 V absolute voltage rating. Such a limitation is challenging in high step-up flyback applications due to the secondary leakage. The leakage imposes high voltage stress on the secondary GaN rectifier during its turn-off transient. Such stress may cause irreversible damage to the GaN device. A new method of leakage bypass is presented to mitigate the high voltage stress issue. The experimental results suggest that when compared to conventional secondary active clamp, a 2.3-fold reduction in overshoot voltage stress percentage is achievable with the technique. As a result, it is possible to utilize GaN as the rectifier while keeping the peak voltage stress within the 650 V limitation with the technique.

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