Adoption of wide bandgap technology in hybrid/electric vehicles-opportunities and challenges

Han, Di; Li, Silong; Lee, Woongkul; Sarlioglu, Bulent

doi:10.1109/itec.2017.7993332

Cited by 26 publications

(14 citation statements)

References 62 publications

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“…Si has an E c = 20V.µm −1 whereas SiC and GaN have an [53]. This means for the same voltage rating WBG devices can be a lot smaller, or for the same size the voltage rating of a WBG semiconductor can be a lot higher [54,50].…”

Section: Methodsmentioning

confidence: 99%

“…The wide band gap aspect to these materials denoted that they have a large eV gap between their valence and conducting bands. Table 5.1 shows values of band gaps for various semi-conductors with a WBG material having an energy gap higher than 3eV [50]. From the list of semi-conductors silicon has been widely used as the main material for power switches such as: power diodes, thyristors, metal-oxide semiconductor field effect transistor (MOSFET) and insulated gate bi-polar transistors (IGBT's) [51].…”

Section: Using Wide Band Gap Semi-conductorsmentioning

confidence: 99%

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Cell equalisation circuits: A review

Carter

Fan

Cao

2020

Journal of Power Sources

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Section: Methodsmentioning

confidence: 99%

Section: Using Wide Band Gap Semi-conductorsmentioning

confidence: 99%

Cell equalisation circuits: A review

Carter

Fan

Cao

2020

Journal of Power Sources

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“…Table 4 and Table 5 show several manufacturers that are currently using WBG devices for OBC application. Although WBG devices currently have a higher cost, it is expected that the price will decrease as the production rises [143], [144]. As an alternative solution, some companies, like Texas Instruments, combine SiC with Si technologies to reduce the cost while improving the overall performance [119].…”

Section: B Wbg Devicesmentioning

confidence: 99%

A Review of Bidirectional On-Board Chargers for Electric Vehicles

et al. 2021

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The fast development of electric vehicles (EVs) provides significant opportunities to further utilize clean energies in the automotive. On-board chargers (OBCs) are widely used in EVs because of their simple installation and low cost. Limited space in the vehicle and short charging time require an OBC to be power-dense and highly efficient. Moreover, the possibility for EVs to deliver power back to the grid has increased the interest in bidirectional power flow solutions in the automotive market. This paper presents a comprehensive overview and investigation on the state-of-the-art solutions of bidirectional OBCs. It reviews the current status, including architectures and configurations, smart operation modes, industry standards, major components, and commercially available products. A detailed overview of the promising topologies for bidirectional OBCs, including two-stage and single-stage structures, is provided. Future trends and challenges for topologies, wide bandgap technologies, thermal management, system integration, and wireless charging systems are also discussed in this paper.

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“…• No Q rr period which translates to their capability of switching at high frequencies Some of the challenges associated with GaN are the high electromagnetic interference (EMI), gate ringing and oscillation due to the parasitics rising from the power circuit, device packaging and the device control loop. The dead-time resulting from the higher frequency reduces voltage significantly leading to power loss [37]. With the smaller switching times, the common mode and differential mode noise associated with GaN devices increase accordingly [38].…”

Section: A Device Comparisonmentioning

confidence: 99%

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

et al. 2020

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Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detailed benefits of using GaN devices in transportation electrification applications. The material properties of GaN including the applications of GaN HEMTs at different switch ratings are presented. The challenges currently facing the transportation industry are introduced and possible solutions are presented. A detailed review of the use of GaN in the Electric Vehicle (EV) powertrain is discussed. The implementation of GaN devices in aircraft, ships, rail vehicles and heavy-duty vehicles is briefly covered. Future trends of GaN devices in terms of cost, voltage level, gate driver design, thermal management and packaging are investigated.INDEX TERMS Electric vehicle, gallium nitride, high electron mobility transistor, hybrid electric vehicle, wide bandgap devices.

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Adoption of wide bandgap technology in hybrid/electric vehicles-opportunities and challenges

Cited by 26 publications

References 62 publications

Cell equalisation circuits: A review

Cell equalisation circuits: A review

A Review of Bidirectional On-Board Chargers for Electric Vehicles

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

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