Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Keshmiri, Niloufar; Wang, Deqiang; Agrawal, Bharat; Hou, Ruoyu; Emadi, Ali

doi:10.1109/access.2020.2986972

Cited by 130 publications

(65 citation statements)

References 78 publications

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“…It is now commonly accepted that high electron-mobility transistors based on gallium nitride (GaN HEMT) are the best choice for high-frequency and high-power devices, such as high-power amplifiers (HPAs) used in new generation radars, including active electronically scanned array (AESA), and modern wireless communication systems, i.e., LTE-A and 5G radios [1][2][3][4]. Due to the large complexity of signals applied in modern radars and new radios, power amplifiers have to meet stringent requirements concerning not only their linearity, output power level and efficiency but also appropriate heat management [5].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Self-Heating Process in GaN-Based HEMTs

et al. 2020

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Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication systems (LTE-A, 5G) and advanced radars (active electronically scanned array (AESA)). This is especially true for systems operating with variable-envelope signals where accurate determination of self-heating effects resulting from strong- and fast-changing power dissipated inside transistor is crucial. In this work, we have developed an advanced measurement system based on DeltaVGS method with implemented software enabling accurate determination of device channel temperature and thermal resistance. The methodology accounts for MIL-STD-750-3 standard but takes into account appropriate specific bias and timing conditions. Three types of GaN-based HEMTs were taken into consideration, namely commercially available GaN-on-SiC (CGH27015F and TGF2023-2-01) and GaN-on-Si (NPT2022) devices, as well as model GaN-on-GaN HEMT (T8). Their characteristics of thermal impedance, thermal time constants and thermal equivalent circuits were presented. Knowledge of thermal equivalent circuits and electro–thermal models can lead to improved design of GaN HEMT high-power amplifiers with account of instantaneous temperature variations for systems using variable-envelope signals. It can also expand their range of application.

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Section: Introductionmentioning

confidence: 99%

Characterization of Self-Heating Process in GaN-Based HEMTs

et al. 2020

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“…Nowadays, the switches inside the PECs are based on silicon (Si) semiconductor technology. However, new insights in switching technology have stimulated the development of wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) [24][25][26][27].…”

Section: Power Electronics Interfaces Based On Wbg Technologiesmentioning

confidence: 99%

“…However, the WBG semiconductors provide interesting characteristics and advanced material properties compared with traditional Si semiconductors, i.e., operating at higher voltages and lower leakage current, higher electron mobility, electron saturation velocity, higher switching frequency and higher thermal conductivity. The WBG materials require energy larger than 1 eV or 2 eV to transfer an electron from the highest energy level of the valence band to lowest energy level of the conduction band within the semiconductor [24][25][26][27][28][29][30]. A comparison of material properties between Si, SiC and GaN is shown in Figure 2.…”

Section: Power Electronics Interfaces Based On Wbg Technologiesmentioning

confidence: 99%

Beyond the State of the Art of Electric Vehicles: A Fact-Based Paper of the Current and Prospective Electric Vehicle Technologies

Mierlo

Berecibar

Baghdadi

et al. 2021

WEVJ

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Today, there are many recent developments that focus on improving the electric vehicles and their components, particularly regarding advances in batteries, energy management systems, autonomous features and charging infrastructure. This plays an important role in developing next electric vehicle generations, and encourages more efficient and sustainable eco-system. This paper not only provides insights in the latest knowledge and developments of electric vehicles (EVs), but also the new promising and novel EV technologies based on scientific facts and figures—which could be from a technological point of view feasible by 2030. In this paper, potential design and modelling tools, such as digital twin with connected Internet-of-Things (IoT), are addressed. Furthermore, the potential technological challenges and research gaps in all EV aspects from hard-core battery material sciences, power electronics and powertrain engineering up to environmental assessments and market considerations are addressed. The paper is based on the knowledge of the 140+ FTE counting multidisciplinary research centre MOBI-VUB, that has a 40-year track record in the field of electric vehicles and e-mobility.

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“…With the limitations of silicon (Si) devices due to its inherent properties, use of WBG devices has gained attention in recent years. In power electronics, specifically DC/DC converters, SiC and GaN WBG devices have shown benefits in electrified transportation applications [9]. For higher voltage DC/DC converters, SiC would be a better choice due to the limited voltage range of GaN devices (650 V).…”

Section: ) Input-series Output-parallelmentioning

confidence: 99%

“…This is particularly important with fast switching semiconductors such as WBG devices. WBG devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have shown improvements in the design of highly efficient and compact power converters [9]. With high voltage levels in MEA applications and the limited voltage rating of GaN (650 V) Metal Oxide Silicon Field Effect Transistors (MOSFETs), use of GaN devices can be restricted based on the selected topology.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Isolated Bidirectional DC/DC Converters Using WBG Devices for More Electric Aircraft

Keshmiri

Hassan

Rodriguez

et al. 2021

IEEE Open J. Ind. Electron. Soc.

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With the aim towards lighter and more efficient electrical systems in future aircraft, design of DC/DC converters with high efficiency, power density and improved thermal management becomes necessary. This paper investigates the detailed design of isolated bidirectional DC/DC converters for more electric aircraft (MEA). Use of wide bandgap (WBG) devices to enhance system efficiency is considered. A transformer optimization technique based on switching frequency for different converter topologies is investigated. The control strategy of the discussed configurations are verified in the PLECS simulation environment. Dual active bridge (DAB), input-series output-parallel (ISOP), neutral point clamped (NPC) and active neutral point clamped (ANPC) converters are considered to exploit benefits offered by WBG devices for MEA. A comparison is performed in terms of efficiency, thermal management, power density and electromagnetic interference (EMI). The results indicate that the ANPC converter is better for efficiency, thermal management and power density. The DAB converter showed similar results to the ISOP with the DAB yielding higher efficiency. The NPC and ANPC configurations resulted in the best EMI performance. The NPC converter proved to be the least effective solution with regard to efficiency, thermal management and power density. INDEX TERMS dc/dc converter, more electric aircraft, mosfet, multilevel converter, thermal management.

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Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Cited by 130 publications

References 78 publications

Characterization of Self-Heating Process in GaN-Based HEMTs

Characterization of Self-Heating Process in GaN-Based HEMTs

Beyond the State of the Art of Electric Vehicles: A Fact-Based Paper of the Current and Prospective Electric Vehicle Technologies

Comparison of Isolated Bidirectional DC/DC Converters Using WBG Devices for More Electric Aircraft

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