Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Abstract

GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent transport characteristics and ability to generate free carriers via polarization doping, GaN is expected to be an important technology for ultra-low temperature and quantum computing electronics. Finally, given the increasing cost of hardware prototyping of new devices and circuits, the use of high-fidelity device models and data-driven modeling approaches for technology-circuit co-design are projected to be the trends of the future. In this regard, physically inspired, mathematically robust, less computationally taxing, and predictive modeling approaches are indispensable. With all these and future efforts, we envision GaN to become the next Si for electronics.

Crystal‐Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide‐Bandgap AlN Semiconductors

“…These structural similarities make the integration of superconductor electronics into semiconductor optoelectronic devices feasible. [ 10–13 ]…”

Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN

“…Josephson junctions based on NbN x /AlN have been used as superconducting qubits. Furthermore, the combination of GaN HEMT low-noise amplifiers and superconducting qubits may represent the future of quantum computer applications . Ultimately, the AlN/NbN x /AlN polarity structure fabricated herein is a promising platform for connecting the functions of NbN x as a qubit with N-polar GaN HEMTs.…”

Highly Scaled GaN Complementary Technology on a Silicon Substrate

“…Therefore, two metal deposition steps were required. Two aspects are critical for the gate module, namely: 1) a highly selective GaN/AlGaN etch with good surface morphology after etch and 2) highly robust etch mask using gate metal for the etch in (1) showing that significant amounts of metal were sputtered off the gates. (d) SEM image of a gate with a nonideal etch.…”

“…T HE rising performance of GaN power ICs has offered compactness and record levels of efficiency and power for data centers, power adapters, electric vehicles (EVs), and 5G/6G telecommunication systems [1], [2], [3]. However, the lack of a GaN p-channel field effect transistor (p-FET) significantly increases static power dissipation (resulting from the use of n-type only enhancement-mode (E-mode)/depletion-mode logic) and prevents all-GaN integration (e.g., control loops and analog mixed-signal blocks) [4].…”