Embedded Decoupling Capacitors up to 80 nF on Multichip Module-Deposited with Quasi-Three-Dimensional Metal–Insulator–Metal Structure

Abstract

Embedded capacitors with available capacitances up to $80 nF have been implemented on a thin-film multichip moduledeposited (MCM-D) substrate. By cost-effective silicon wet etching, a new metal-insulator-metal (MIM) structure named quasi-three-dimensional MIM capacitor has been realized. The groove structure formed by silicon wet etching increases effective capacitance area, thus enhancing capacitance density by 1.5 times. No additional mask or process step is required to form the groove structure since it is simultaneously patterned and etched with ground bumps that are for effective interconnection. The implemented capacitors have capacitances from 2 to 78 nF with a scalable density of 3.6 nF/mm 2 , indicating that they are excellent candidates for high-power decoupling application.

Electrical Properties of Amorphous BaTi4O9 Films Grown on Cu/Ti/SiO2/Si Substrates Using RF Magnetron Sputtering

“…For example, a decoupling capacitor occupies a large portion of the device area and parasitic inductance is reduced in an embedded capacitor compared with a surface‐mounted capacitor. Therefore, research attention has focused on these types of capacitors for the miniaturization and the performance enhancement of the electronic devices . To fabricate an embedded capacitor inside a PCB, the dielectric thin film has to be grown at low temperatures (≤300°C).…”

“…Therefore, research attention has focused on these types of capacitors for the miniaturization and the performance enhancement of the electronic devices. [1][2][3][4] To fabricate an embedded capacitor inside a PCB, the dielectric thin film has to be grown at low temperatures ( 300°C). According to the International Technology Roadmap for Semiconductor (ITRS) for a capacitor grown on an organic substrate for the future (by 2016), this device should have a high capacitance of 5.0 nF/cm 2 , with a high-quality factor (Q) of 50 at rf frequency and a breakdown voltage greater than 100 V. 5 Although capacitance density can be increased by reducing the thickness of the dielectric film, the breakdown voltage also decreases with decreasing film thickness, indicating that it is not possible to grow a very thin film to increase the capacitance density of the embedded capacitor.…”

System-on-Package Platform with Thick Benzocyclobutene Layer for Millimeter-Wave Antenna Application

“…SOP technology using BCB not only provides excellent electrical performance, but is also capable of achieving high-resolution patterns, which is favorable in mm-wave frequency compared with liquid crystal polymer (LCP)-or low-temperature co-fired ceramic (LTCC)-based SOP technology. [4][5][6] Thanks to these advantages, there are many mm-wave applications using BCB-based SOP technology, such as oscillators, power-combining modules, duplexers, and antennas as part of a transceiver module. 2,7,8) Integrated antennas operating at mm-wave frequency related to SOP technology using BCB as a dielectric layer were reported by several groups.…”

Effects of oxygen pressure and Mn-doping on the electrical and dielectric properties of Bi5Nb3O15thin film grown by pulsed laser deposition

“…These can be achieved by the fabrication of integral passives, which include functional elements such as resistors, inductors and capacitors, embedded into the printed circuit boards (PCBs) [2]. In particular, research on embedded 4 Author to whom any correspondence should be addressed.…”

“…decoupling capacitors has been intensified to minimize the device size because such capacitors occupy a large proportion of the device area. Since the embedded capacitor is formed inside the PCBs, the dielectric thin film requires a low growth temperature ( 200 • C) and the resultant film should have a large dielectric constant (ε r ) to obtain the necessary high capacitance density (0.7-0.9 nF mm −2 ) for the high power decoupling application [3,4].…”