Electrical Properties of Amorphous BaTi₄O₉ Films Grown on Cu/Ti/SiO₂/Si Substrates Using RF Magnetron Sputtering

Abstract

Amorphous BaTi4O9 (BT4) films for use as capacitors embedded in PCB substrates were grown on Cu electrodes at low temperatures (≤ 200°C). The dielectric constant (k) of the amorphous BT4 film grown at room temperature (RT) was 38, and its dissipation factor was 3.2% at 100 kHz. A similar k value was obtained at radio‐frequency ranges, with a quality factor of 143 at 1.0 GHz. The films showed a capacitance density of 200 nF/cm2, a temperature coefficient of capacitance of 296 ppm/°C at 75 kHz, and a breakdown voltage of 42.5 V. This film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for 2016 for capacitors grown on organic substrates. In addition, the leakage current mechanism of the amorphous BT4 films was found to be Schottky emission, and the Schottky barrier height was calculated as 2.26 eV.

High‐Performance (Na0.5K0.5)NbO3 Thin Film Piezoelectric Energy Harvester

“…For the Pt/NKN/Pt/PI device, a Pt top electrode was deposited on the rough surface of the NKN film at RT without postmetal annealing, indicating that adhesion between the Pt top electrode and the NKN film was poor as compared with that of the NKN film grown on the Pt–Si substrate. Therefore, the degraded Pt/NKN interface could be responsible for the deterioration of the dielectric and electric properties of the transferred NKN film; similar results have been observed for the other dielectric films …”

Electrical Characteristics of $\hbox{Ba}_{0.6}\hbox{Sr}_{0.4} \hbox{TiO}_{3}$ Thin-Film Chip Capacitors for Embedded Passive Components

“…At the high electric field, the current conduction mechanism can be known by linear correlation between ln(J/T 2 ) versus E 1/2 for the Schottky emission (SE) and ln(J/E) versus E 1/2 for the Poole-Frenkel emission (PFE) as shown in Fig. 3(c), where J is the current density, T is the temperature, and E is the electric field [12]. The slope of each plot is used to calculate γ value with the equation explained by Peng et al [13] as follows:…”