Dielectric–electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO3 capacitors

Gandhi, Saumya; Xiang, Shu; Kumar, Manish; Sharma, Himani; Chakraborti, Parthasarathi; Raj, P. Markondeya; Tummala, Rao

doi:10.1007/s10854-016-5563-5

Cited by 5 publications

(2 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, Gandhi et al demonstrated the reduction of the leakage current by three decades when using LNO instead of copper. The leakage current has been strongly reduced from 200 μA cm −2 to 400 nA cm −2 . Moreover, conductor‐like and capacitor‐like behaviors were observed capacitor with 200 nm thick BaTiO 3 as insulating layer depending on the nature of the top electrode .…”

Section: Mim Capacitors Fabrication and Electrical Performancesmentioning

confidence: 98%

See 1 more Smart Citation

Ba_0.6Sr_0.4TiO₃ Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors

Tetsi

Philippot

Bord‐Majek

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

Metal-insulator-metal (MIM) capacitors with Ba 0.6 Sr 0.4 TiO 3 (BST) thin films as insulating layers are fabricated using a novel, fast, and low-cost method. On one hand, the process lies in the swift, continuous, and scalable synthesis of BST nanoparticles using the supercritical fluid technology and, on the other hand, the nonpyrolytic spray coating of thin films using colloidal nanocrystals as ink. The authors focus on the deposition process of thin and uniform layer. A dispersed colloidal suspension based on BST nanoparticles is deposited on a hot copper substrate. A 200 nm thick dielectric film is successfully obtained. Electrical characterizations of Cu/BST/Al MIM structure demonstrate a state-of-the-art capacitance density almost reaching 1 mF cm À2 within an operating voltage range of AE1 V. Moreover, an annealing process of the dielectric layer and the final MIM capacitor at 90 C during 15 h brings a significant decrease of the leakage current by three decades from mA cm À2 to mA cm À2 .

show abstract

Section: Mim Capacitors Fabrication and Electrical Performancesmentioning

confidence: 98%

“…In contrast, recent studies have demonstrated high capacitance density in the range of 1–3 µF cm −2 with sputtering as technology for the deposition of the dielectric material . For example, Gandhi et al achieved a capacitance density of 1.3 µF cm −2 with sputtered Ba(Sr)TiO 3 thin films .…”

Section: Introductionmentioning

confidence: 99%

Ba_0.6Sr_0.4TiO₃ Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors

Tetsi

Philippot

Bord‐Majek

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Oxide composition studies of electrochemically grown tantalum oxide on sintered tantalum using XPS depth-profiling and co-relation with leakage properties

Chakraborti

Sharma

Pulugurtha

et al. 2017

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Thickness dependence of microstructure, dielectric and leakage properties of BaSn0.15Ti0.85O3 thin films

Zhang

et al. 2018

Ceramics International

View full text Add to dashboard Cite

Dielectric–electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO3 capacitors

Cited by 5 publications

References 14 publications

Ba_0.6Sr_0.4TiO₃ Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors

Ba_0.6Sr_0.4TiO₃ Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors

Oxide composition studies of electrochemically grown tantalum oxide on sintered tantalum using XPS depth-profiling and co-relation with leakage properties

Thickness dependence of microstructure, dielectric and leakage properties of BaSn0.15Ti0.85O3 thin films

Contact Info

Product

Resources

About

Dielectric–electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO3 capacitors

Cited by 5 publications

References 14 publications

Ba0.6Sr0.4TiO3 Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors

Ba0.6Sr0.4TiO3 Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors

Oxide composition studies of electrochemically grown tantalum oxide on sintered tantalum using XPS depth-profiling and co-relation with leakage properties

Thickness dependence of microstructure, dielectric and leakage properties of BaSn0.15Ti0.85O3 thin films

Contact Info

Product

Resources

About

Ba_0.6Sr_0.4TiO₃ Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors

Ba_0.6Sr_0.4TiO₃ Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors