Effects of oxygen pressure and Mn-doping on the electrical and dielectric properties of Bi₅Nb₃O₁₅thin film grown by pulsed laser deposition

Abstract

Bi5Nb3O15 (B5N3) thin films grown at temperatures above 500 °C developed a crystalline B5N3 phase that decomposed into a BiNbO4 phase in the film grown at 700 °C, probably due to Bi2O3 evaporation. The leakage current density of the B5N3 film grown at 200 °C under an oxygen pressure (OP) of 100 mTorr was high at approximately 6.3 × 10−7 A cm−2 at 0.2 MV cm−1, with a small breakdown field of 0.24 MV cm−1 due to the presence of intrinsic oxygen vacancies. The electrical properties of the B5N3 films improved with increasing OP during the growth but the dielectric constant (εr) decreased. The Mn-doping also improved the electrical properties of the B5N3 films grown under low OP by producing doubly ionized oxygen vacancies, which decreased the number of the intrinsic oxygen vacancies. Furthermore, the Mn-doping increased the εr value of the B5N3 film, confirming the effectiveness of such doping in improving both the electrical and the dielectric properties of the B5N3 film. In particular, the 5.0 mol% Mn-doped B5N3 film grown at 200 °C under an OP of 100 mTorr exhibited a low leakage current density of 7.9 × 10−8 A cm−2 at 0.2 MV cm−1 and a large breakdown field of 0.4 MV cm−1 with a high εr of 64.

An Mn Doped Polyaniline Electrode for Electrochemical Supercapacitor

“…The aim of the synthesis of Mn doped PANI films as electrode for supercapacitor is to improve the electronic conductivity of PANI films with acceptable level of specific capacitance. 42 The doping concentration was varied to determine its effect on the magnitude of specific capacitance of the PANI films. In comparison to a well-known RuO 2 , Mn doped PANI is a better choice for supercapacitor application because of its ecofriendly nature.…”

Effect of laser beam energy density on the structural and electrical properties of TiO2-doped Bi5Nb3O15 thin film grown by pulsed laser deposition

“…However, the ε r value of the B 5 N 3 film remains too low for application in embedded capacitors. According to our previous work, Mn doping increased the ε r value of the B 5 N 3 films while simultaneously improving the electrical properties [12]. Furthermore, it is considered that the ε r value of the B 5 N 3 film could be further increased by replacing a proper number of Nb 5+ ions in the B 5 N 3 film with Ti 4+ ions because, being lighter and smaller than the Nb 5+ ion, the Ti 4+ ion is more easily deviated from its position under an electric field, thereby producing a large dipole moment.…”

“…For the films grown at a low beam energy density ( 2.0 J cm −2 ), peaks for both Bi 3 NbO 7 and Bi 8 Nb 18 O 57 phases were observed. The Bi 3 NbO 7 phase is known as a low temperature transient phase of the B 5 N 3 phase and has been observed in the B 5 N 3 film grown at low temperatures (<400 • C) [12]. The Bi 8 Nb 18 O 57 phase was considered to be a low temperature transient phase of the TiO 2 -added B 5 N 3 phase because it was observed in the TiO 2 -doped B 5 N 3 films grown at 200 • C at the low beam energy density ( 2.0 J cm −2 ).…”