Abstract:With the addition of TiO2, the dielectric constant (εr) of a Bi5Nb3O15(B5N3) film was slightly increased and the leakage current decreased, probably due to the increased dipole moment and the decreased number of free electrons in the film, respectively. The energy density of the laser beam considerably influenced the structure and electrical properties of the 1.0 mol% TiO2-doped B5N3 (TBN) films. At low beam energy densities (⩽2.0 J cm−2), Bi3NbO7 and Bi8Nb18O57 phases with a porous microstructure were formed … Show more
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