Elimination of interface defects in mismatched epilayers by a reduction in growth area

Fitzgerald, Eugene A.; Kirchner, P. D.; Proano, R.E.; Pettit, G. D.; Woodall, J. M.; Ast, D. G.

doi:10.1063/1.99110

Cited by 82 publications

(20 citation statements)

References 11 publications

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“…The linear density of the MDs along the ͓110͔ direction is larger than that of the MDs along the ͓110͔ direction. [12][13][14] Since the XRT image was recorded using an InP substrate reflection, we found that the MDs locate at the MQW substrate interface. The X-Y line in Fig.…”

Section: A Origin Of Dark Lines In -Pl Imagesmentioning

confidence: 99%

Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells

Ogasawara

Sugiura

Mitsuhara

et al. 1998

Journal of Applied Physics

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InGaAs quantum wells on wafer-bonded In P ∕ Ga As substrates J. Appl. Phys. 98, 093526 (2005); 10.1063/1.2130889Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature We examined the critical thickness of strained multi quantum wells ͑MQWs͒ consisting of InAsP/ InGaAsP and InGaAsP/InGaAsP. More than 50 MQWs with different total thicknesses, well strain, and well thicknesses were prepared by metalorganic molecular beam epitaxy ͑MOMBE͒ or metalorganic vapor phase epitaxy ͑MOVPE͒ to study the influence of net strain, strain type, and temperature on critical thickness. The microscopic photoluminescence method was used mainly to observe misfit dislocations in the MQWs. Three kinds of net strain-critical thickness curves were experimentally determined, i.e., the curves for compressive as well as tensile strained MQWs grown by MOMBE and that for compressive strained MQWs grown by MOVPE. We found that the above three curves coincide with each other and differ greatly from the Matthews' ͓J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 ͑1974͔͒ theoretical curve in a low-net strain range of less than 0.5%.

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Section: A Origin Of Dark Lines In -Pl Imagesmentioning

confidence: 99%

Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells

Ogasawara

Sugiura

Mitsuhara

et al. 1998

Journal of Applied Physics

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“…The origin of this disparity possibly come from the fact that dislocations in GaAs, a zincblende crystal, are orientation-dependent. They can be As-or Ga-terminated (α-or β-type) and have different velocities [13]. The greater average step height along the [110] direction results in the stronger contrast of [1][2][3][4][5][6][7][8][9][10] stripes seen in the AFM image of Fig.…”

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confidence: 97%

Evolution of InAs quantum dots grown on cross‐hatch substrates

Limwongse

Panyakeow

Kanjanachuchai

2009

Phys. Status Solidi (c)

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InAs quantum dots (QDs) are grown on In0.2Ga0.8As/GaAs cross‐hatch layer by molecular beam epitaxy. The self‐assembled QDs form with the deposition of approximately 0.8 monolayer (ML) of InAs. The QDs distribute on the cross‐hatch surface unevenly: more are found along the [1‐10] crystallographic direction than the orthogonal [110] direction, while there exists even lower density of QDs on the flat areas. Height analyses indicate that QDs first form at the hatches' intersections, then they form along the [1‐10] direction, the [110] direction, and on the flat areas, respectively. This orderly evolution of QDs is attributed to the characteristic strain distribution of the cross‐hatch surface, giving rise to position‐ and orientation‐dependent critical thickness for QD formation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Thus, when the more sensitive large-area techniques of photoluminescence, cathodoluminescence, and electron-beam-induced current began to be used systematically critical thicknesses moved down to be more consistent with the equilibrium model (25) Secondly, it was shown that the number of dislocation sources in a given area of sample could be controlled by varying the area of the grown heterolayer (26). That is, by using mesaetching prior to growth the dislocation densities on GaInAsGaAs mesa interfaces dropped to zero for 67 prn diameter mesas.…”

Section: Strain and Misfit Dislocationsmentioning

confidence: 98%

What is the atomic structure at solid-state interfaces?

Kavanagh¹,

Chang²,

Sullivan³

1991

Can. J. Phys.

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Significant progress has been made towards our understanding of Schottky barriers, ohmic contacts to GaAs, and misfit dislocation generation at heteroepitaxial interfaces. These subjects are briefly reviewed in this paper. However, many of the remaining issues still hinge on a more detailed knowledge of the atomic structure at interfaces and its effect on electron transport. A new technique, ideal for this problem, entitled ballistic electron emission microscopy (BEEM) is described. In BEEM the spatial resolution of the scanning tunneling microscope is used to probe the local current transport at an interface.On a fait d'importants progrks dans la comprChension des barrikres Schottky, des contacts ohmiques avec GaAs et la generation de dislocation aux interfaces hitero-Cpitaxiales. Ces sujets sont rapidement passis en revue dans cet article. I1 y a cependant encore des problkmes non resolus qui requikrent une connaissance plus dCtaillCe de la structure atomique aux interfaces et de ses effets sur le transport Clectronique. On decrit une nouvelle technique, idkale pour cette etude, a laquelle on a donne le nom de microscopic par emission Clectronique balistique (MEEB). Cette technique utilise la resolution spatiale du microscope de balayage 5 effet tunnel pour sonder le transport de courant local a une interface.[Traduit par la redaction]Can.

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Elimination of interface defects in mismatched epilayers by a reduction in growth area

Cited by 82 publications

References 11 publications

Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells

Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells

Evolution of InAs quantum dots grown on cross‐hatch substrates

What is the atomic structure at solid-state interfaces?

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