Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Abstract

Note: Micro-cantilevers with AlN actuators and PtSi tips for multi-frequency atomic force microscopy Rev. Sci. Instrum. 83, 096107 (2012); 10.1063/1.4755749 Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrateCantilevers with resonance frequency ranging from 1 MHz to 100 MHz have been developed for dynamic atomic force microscopy. These sensors are fabricated from 3C-SiC epilayers grown on Si(100) substrates by low pressure chemical vapor deposition. They use an on-chip method both for driving and sensing the displacement of the cantilever. A first gold metallic loop deposited on top of the cantilever is used to drive its oscillation by electrothermal actuation. The sensing of this oscillation is performed by monitoring the resistance of a second Au loop. This metallic piezoresistive detection method has distinct advantages relative to more common semiconductor-based schemes. The optimization, design, fabrication, and characteristics of these cantilevers are discussed. V C 2014 AIP Publishing LLC. [http://dx.

3C-SiC — From Electronic to MEMS Devices

“…Lateral resonator [94] Vertical resonator [83] Nanocantilever [95] For most applications, the idea is to take advantage of the SiC physical properties. For example, the resonant frequencies of the vertical resonators presented in Fig.…”

“…In 2010, our groups also investigated the Young's modulus of 3C-SiC films by means of the resonance frequencies of clamped-free cantilevers, but for thin 3C-SiC epilayers (<550 nm) as submicron 3C-SiC layers are required for specific applications, for example, in the field of atomic force microscopy, as presented in Fig. 7(c) [95]. For (100) and (111) 3C-SiC oriented films, the Young's modulus has been evaluated to 350 GPa [68].…”

Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate

“…perfectly appropriate. As an example, the unique mechanical properties of silicon carbide are huge benefits to achieve high-frequency resonant devices [5]. In addition, the silicon carbide biocompatibility is particularly suitable for bio and medical applications [6].…”

Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications

“…The piezoresistive effect is widely used to convert a mechanical loading into an electrical signal. The effect is utilized in different devices such as pressure sensors [ 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 ], tactile sensors [ 14 ], strain gauges [ 15 ], flow sensors and others [ 16 , 17 , 18 , 19 ]. Piezoresistive materials are characterized by their unique electromechanical coupling and have recently received growing interest with the miniaturization of electromechanical devices down to micro or even nano scales.…”