Electrothermal stability of bipolar transistors at medium- and high-current operation regimes

Nenadovic, N.; Spina, L. La; d’Alessandro, V.; Nanver, L.K.

doi:10.1109/bipol.2005.1555198

Cited by 2 publications

(2 citation statements)

References 9 publications

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“…Although the electro-thermal instability in bipolar transistors has been proved [3][4], extending the investigation to circuit level is difficult, especially if we need to consider the layout and the package influence. For investigating the electro-thermal behavior of circuits the direct method was proposed [5].…”

Section: Electro-thermal Co-simulationmentioning

confidence: 99%

Investigation of electro-thermal behaviour of a linear voltage regulator and its protection circuits by simulator coupling

Bajenaru

Boianceanu

Brezeanu

2013

CAS 2013 (International Semiconductor Conference)

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This paper presents an electro-thermal co-simulation method which can be used for thorough verification of linear voltage regulators. The method can capture successfully the electro-thermal interaction between the power stage elements and the protection circuits, accounting also for layout variations and packaging conditions. An electro-thermal destruction mechanism of a high power linear voltage regulator (20W/mm2) is investigated in this way. The simulated results have been shown to replicate the measured behavior of the circuits.

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Section: Electro-thermal Co-simulationmentioning

confidence: 99%

Investigation of electro-thermal behaviour of a linear voltage regulator and its protection circuits by simulator coupling

Bajenaru

Boianceanu

Brezeanu

2013

CAS 2013 (International Semiconductor Conference)

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“…However, glass and oxide are also very poor thermal conductors, which entails high proneness of the silicon-onglass transistors to selfheating. Thus, among other things, the silicon-on-glass devices are used in our studies as a sort of experimental testlab for electrothermal effects [6], [13], [14]. In addition, FEAT has been verified through comparison with numerical simulations of power BJTs.…”

Section: Experimental and Numerical Verificationmentioning

confidence: 99%

FEAT - A Simulation Tool for Electrothermal Analysis of Multifinger Bipolar Transistors

Spina

Nenadovic

d’Alessandro³

et al. 2005

EUROCON 2005 - The International Conference on "Computer as a Tool"

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In this paper, we present a new simulation tool, which can be effectively adopted for the electrothermal analysis of multifinger bipolar transistors. The program is based on an optimized procedure for solving the nonlinear system of equations governing the electrothermal device behavior. Features like model accuracy, short computation time, flexibility, and user friendliness make the proposed software a good candidate for optimizing both reliability and performance of modern transistors with complex layouts.

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Electrothermal stability of bipolar transistors at medium- and high-current operation regimes

Abstract: Electrothermal behavior of single-and twofinger bipolar transistors at medium and high-current operation is examined thoroughly and described by novel analytical formulations. Combined effects are identified that are responsible for thermally (re)stabilizing Si-and SiGe-base devices.

Cited by 2 publications

References 9 publications

Investigation of electro-thermal behaviour of a linear voltage regulator and its protection circuits by simulator coupling

Investigation of electro-thermal behaviour of a linear voltage regulator and its protection circuits by simulator coupling

FEAT - A Simulation Tool for Electrothermal Analysis of Multifinger Bipolar Transistors

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