Electrostatics of Partially Gated Carbon Nanotube FETs

Buckling of double-walled carbon nanotubes modeled by solid shell elements

“…Furthermore, FEM is also used to investigate the electrostatics of CNT field-effect transistors ͑FETs͒. 26 More recently, Sun and Zhao 27 applied molecular-mechanics-based FE approach for the prediction of stiffness and strength of various types of SWCNTs.…”

Error analysis of boundary condition approximations in the modeling of coaxially‐gated carbon nanotube field‐effect transistors

“…When the symmetry of the device allows a reduction in dimension to 2-D, a conformal transformation yields an exact solution for the potential in all regions [9]. We use this method as a benchmark, solving the cylindrical Poisson equation in all space, and compare against results obtained from imposing a null Neumann condition at open boundaries in Schottky-barrier (SB) CNFETs.…”

“…We consider the error introduced in the DC ON-current, extending the earlier work of Ref. [9], in which only the equilibrium case was considered. We continue to evaluate a coaxial structure as a benchmark device in terms of scale and performance, although the device dimensions are based on a state-of-the-art planar device [10], with short CN length, high-permittivity gate dielectric, and thin source/drain contacts.…”

“…1 (b), dashed line); in the benchmark case, the conformal transformation method described in Ref. [9] is used. Solving the conformally mapped problem numerically, error sources are restricted to the convergence tolerance and the element size.…”

Carbon nanotube transistors: an evaluation

“…Conformal mapping is effective when open boundaries are present. 25 For the metallic electrodes, a simple phenomenological representation, assuming no Fermi-level pinning, 21 is…”