Electrostatics of coaxial schottky-barrier nanotube field-effect transistors

John, D.L.; Castro, L. C.; Clifford, Jason P.; Pulfrey, D.L.

doi:10.1109/tnano.2003.817228

Cited by 67 publications

(38 citation statements)

References 17 publications

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“…In the former case, the Poisson equation can be treated as a two dimensional problem [9], whereas in the latter one, the Poisson equation should be solved in the 3D system.…”

Section: Device Structurementioning

confidence: 99%

Noise analysis of coaxial Schottky barrier carbon nanotube fets using non equilibrium Green’s function formalism

et al. 2009

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Abstract:The effect of noise on the performance of Schottky Barrier Carbon Nanotube Field Effect Transistors (SBCNTFETs) has been investigated under various bias conditions. In order to calculate the noise power spectral density, the Non-Equilibrium Green's Function formalism (NEGF) is used to obtain the transmission coefficient and the number of carriers inside the channel. Results are presented in two sections: In the first section the Hooge's empirical rule is used to investigate the flicker noise properties of SB-CNTFETs with defects in the gate oxide region, while in the second section the thermal and shot noise properties of SB-CNTFETs are studied. Finally, the best bias points in the ON and OFF states have been suggested according to the total noise power spectral density and the device signal to noise ratio.

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“…In the former case, the Poisson equation can be treated as a two dimensional problem [9], whereas in the latter one, the Poisson equation should be solved in the 3D system.…”

Section: Device Structurementioning

confidence: 99%

Noise analysis of coaxial Schottky barrier carbon nanotube fets using non equilibrium Green’s function formalism

et al. 2009

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show abstract

“…The transistor is ambipolar regardless of the SB height. The reason is that the SB thickness is roughly the gate oxide thickness due to electrostatic screening length [8,37] and the effective mass of carriers in CNTs is small. The barrier is thin when the gate oxide is thin, and it is nearly transparent for any physical value of the SB height.…”

Section: Device Characteristics At the Ballistic Limitmentioning

confidence: 99%

“…Device simulations of CNTFETs have been extensively reported in last five years [5][6][7][8][9][10][11][12][13][14][15][16]. Significant advances have been achieved in developing simulation methods, understanding device physics, and optimizing designs using modeling and simulation.…”

Section: Introductionmentioning

confidence: 99%

Device Simulation of SWNT-FETs

Guo

Lundstrom²

2008

Integrated Circuits and Systems

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“…1 illustrates the coaxial structure simulated in this work: the 2-D Poisson equation is solved using a standard finite-element software package 1 , and the effective-mass Schrödinger equation is solved selfconsistently in 1-D to compute the charge distribution [11]. The current is computed using the Landauer equation [12]. In one instance, null Neumann boundary conditions are used at the open boundaries (see Fig.…”

Section: Introductionmentioning

confidence: 99%