Electrostatic Integrity in Negative-Capacitance FETs – A Subthreshold Modeling Approach

Mitigating DIBL and Short-Channel Effects for III-V FinFETs With Negative-Capacitance Effects

“…It can be seen that, as Lg downscales, both InGaAs and Si FinFETs suffer substantially increased DIBL, and the DIBL degradation of the InGaAs FinFET is larger than that of the Si FinFET. However, the NC effect results in reduced DIBL, and the reduction in DIBL increases with decreasing Lg [4]. Moreover, for a given Lg, the DIBL reduction is larger for the InGaAs NC-FinFET, leading to the comparable DIBL for InGaAs and Si NC-FinFETs in Fig.…”

“…It can be seen that, as compared with the FinFET counterpart, the difference in the peak of EC between low VDS (dashed line) and high VDS (solid line), i.e., the drain induced barrier lowering, for the NC-FinFET is indeed smaller. Due to the short-channel drain capacitive-coupling effect (i.e., inner fringing effect) on the ferroelectric internal charge [4], the EC of the NC-FinFET is raised, and the raise in EC is larger at high VDS (as compared with low VDS), leading to the reduced DIBL for the NC-FinFET. Note that the NC induced DIBL improvement is larger for the InGaAs NC-FinFET (as compared with the Si counterpart) mainly because of the larger inner fringing effect of the InGaAs device due to its higher channel permittivity.…”

“…1(b)] can be obtained by solving 2D Poisson's equation. Based on the assumption of parabolic potential profile in the vertical (i.e., x) direction [21] [22] with adequate boundary conditions (see Appendix A), the following subthreshold potential model for the NC-FinFET can be derived [4]:…”

“…EDUCING the supply voltage (VDD) is crucial to power scaling of future CMOS. Negative-capacitance field-effect transistor (NCFET) [1]- [4] has been regarded as a promising beyond-CMOS device candidate due to its potential in improving subthreshold swing with similar current transport mechanism to MOSFET. In addition, III-V channel materials such as InGaAs are attractive (for nFET) because their high electron mobility can be used to sustain the drive current as VDD scales down [5]- [7].…”

A p‐Type Ferroelectric Field‐Effect Transistor Using Ultrathin Hafnium Aluminum Oxide

“…In recent years, the ferroelectric negative-capacitance transistors (NCFETs) using hafnium zirconium oxide (Hf ZrO x ), [1][2][3][4][5][6][7][8][9] hafnium aluminum oxide (HfAlO x ) [10,12] and dopant-free hafnium oxide (HfO 2 ) [13,14] have been comprehensively investigated for the applications of ultralow power and next-generation transistors. To integrate in highly scaled complementary metal oxide semiconductor (CMOS) logic circuits, the ferroelectric polarization characteristics [15][16][17][18][19][20][21] and negative-capacitance switching properties [22][23][24][25][26] of hafnium-oxide-based ferroelectric materials were widely investigated and demonstrated. Our previous works have demonstrated the Hf ZrO x ferroelectric transistor device [2,3] featuring the fast switching speed of 20 ns for program and erase states and robust long-term endurance cycling.…”