Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Abstract

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.

Fundamental Aspects and Comprehensive Review on Physical Properties of Chemically Grown Tin-Based Binary Sulfides

“… Applications of Sn x S y [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 ]. Solar cell (o-SnS, c-SnS, Sn 2 S 3 as light absorber and SnS 2 as buffer); photodetector (o-SnS, c-SnS, Sn 2 S 3 as light absorber and SnS 2 as buffer); Li- and Na-ion batteries (o-SnS, c-SnS, and SnS 2 as anode materials); gas- and bio sensors (o-SnS, c-SnS, and SnS 2 as sensing materials); tunnel field-effect transistors (TFET) (o-SnS, c-SnS, and SnS 2 as top or back gates); electrochemical and super capacitors (o-SnS, c-SnS, and SnS 2 as electrode materials); capacitor; thermoelectrics (o-SnS, c-SnS, and Sn 2 S 3 as grids); and water-splitting (o-SnS, c-SnS, and SnS 2 as photocathodes).…”

Design and optimization of vertical nanowire tunnel FET with electrostatic doping

“…To create doping of N + and P + at drain/source side, earlier the conception of a polarity gate was preferred. Now we have two technologies for the creation of doping in dopingless devices; one of them is the charge plasma (CP) technique [14,15] and the other one is the electrostatic technique [16][17][18][19]. In the charge plasma technique, there were a few problems.…”