Electroplated Reflection Masks for Soft X-Ray Projection Lithography

Murakami, Katsuhiko; Shimizu, Sumito; Ohtani, Masayasu; Nagata, Hiroshi; Oizumi, Hiroaki; Yamashita, Yoshio; Atoda, Nobufumi

doi:10.1143/jjap.34.6696

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…Attenuated phaseshifting masks (APSM's) become a vital resolution enhancement technology, and has been used widely in DUV lithography [21. However, it is known that a Mo/Si multilayer based reflective mask is desirable in EUV lithography as opposed to a transmission one [4]. PMMA and Ge were used as phase shifting layer and absorption layer, respectively [3].…”

Section: Intrductionmentioning

confidence: 99%

Simulation on a new reflection type attenuated phase-shifting mask for extreme ultraviolet lithography

Chen

Wang

1999

SPIE Proceedings

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We have simulated the optical behavior of a new reflective APSM by utilizing the optical multilayer thin film theory. In a typical Mo/Si multilayer structure, we show that the requirement of a reflective APSM can be met simply by adjusting the thickness of the over-coated Ge layer. A phase shift of 180° results when compared light reflected from a Ge absorption layer to that from a Mo/Si multilayer, and the resultant reflectance ratio is in the range of 4 15 %. No additional phase shifting layer is needed.

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Section: Intrductionmentioning

confidence: 99%

Simulation on a new reflection type attenuated phase-shifting mask for extreme ultraviolet lithography

Chen

Wang

1999

SPIE Proceedings

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“…The housing of the projection optics is a rigid cylinder, which is equipped with gimbaled support mechanisms and differential micrometers coupled to taper blocks that demagnify the motion. A reflection mask which consists of absorber patterns on a multilayer reflector is employed [19,27,33,34]. A mask stage and a wafer stage, which are mechanical scanning stages in vacuum, provide synchronous scanning motion.…”

Section: Projection Optics and Exposure Chambermentioning

confidence: 99%

“…EUV-LLC started the research and development program of EUV lithography systems in collaboration with national laboratories and private companies [12]. On the other hand, several fundamental research studies on EUVL have been performed by NTT [4,[13][14][15][16][17], Hitachi [18][19][20], SORTEC [8,[21][22][23] and Nikon [24][25][26][27] 11, No.4, 1998 development of a ring-field EUV exposure system using aspheric mirrors in collaboration with HIT, Hitachi, and Nikon [28]. It is planned to start the exposure experiments at this Autumn.…”

Section: Introductionmentioning

confidence: 99%

Experimental EUV Exposure System using a Synchrotron Source.

Murakami

Oshino

Kinoshita

et al. 1998

J. Photopol. Sci. Technol.

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Extreme ultraviolet lithography (EUVL) is an candidate for lithography technology to be used for the fabrication of the future-generation semiconductor devices with the design rule of 100nm and below. Till date few extreme ultraviolet (EUV) exposure experiments, which demonstrate a high resolution of less than 100nm using small field optics, have been performed. However, such a high resolution in the case of practical large-field exposure has not yet been reported. We designed a 3-mirror ring-field projection optics, which enabled large-field exposure. An EUV exposure experiment will be performed using an EUVL beam line to be constructed at the new synchrotron ring named New Subaru, which is now under construction by Hyogo Prefecture. In this paper the details of the EUV exposure tool will be described.

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