Experimental EUV Exposure System using a Synchrotron Source.

Abstract

Extreme ultraviolet lithography (EUVL) is an candidate for lithography technology to be used for the fabrication of the future-generation semiconductor devices with the design rule of 100nm and below. Till date few extreme ultraviolet (EUV) exposure experiments, which demonstrate a high resolution of less than 100nm using small field optics, have been performed. However, such a high resolution in the case of practical large-field exposure has not yet been reported. We designed a 3-mirror ring-field projection optics, which enabled large-field exposure. An EUV exposure experiment will be performed using an EUVL beam line to be constructed at the new synchrotron ring named New Subaru, which is now under construction by Hyogo Prefecture. In this paper the details of the EUV exposure tool will be described.