Mask technology of extreme-ultraviolet lithography

Kinoshita, Hiroo; Watanabe, Takeo; Ozawa, A.; Niibe, Masahito

doi:10.1117/12.328848

Cited by 13 publications

(4 citation statements)

References 8 publications

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“…14) consists of a low thermal expansion (LTE) glass substrate, a multilayer, a capping layer, a buffer layer, and an absorber pattern. [16][17][18] Table 3 shows the specifications of EUVL mask.…”

Section: Reflection Maskmentioning

confidence: 99%

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Kinoshita

2007

COSMOS

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EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used. Development of manufacturing equipment is accelerated to aim at the utilization starting from 2011. The critical issues of development are the EUV light source which has the power over 115 W and resist with high sensitivity and low line edge roughness (LER).

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Section: Reflection Maskmentioning

confidence: 99%

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Kinoshita

2007

COSMOS

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“…However, the path toward establishing the EUV lithography faces many technical difficulties. Issues with insufficient light-source power, particlefree mask handling, defect-free mask, availability of flat mask blanks, [1][2][3][4][5] and resist material development 6,7 are some of those difficulties that need to be resolved. From the viewpoint of EUV mask fabrication, mask pattern defect inspection [8][9][10] and repair [11][12][13] are some of the even more demanding tasks to be addressed.…”

Section: Introductionmentioning

confidence: 99%

Observation of phase defect on extreme ultraviolet mask using an extreme ultraviolet microscope

Amano¹,

Terasawa²,

Watanabe³

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Influences of phase defect structures on extreme ultraviolet (EUV) microscope images were examined. Phase defects on the bottom of a multilayer (ML) do not always propagate vertically upward to the ML's top surface. For this study, two types of masks were prepared. One was an EUV blank with programmed phase defects made of lines in order to analyze the inclination angle of the phase defects. The other was an EUV mask that consists of programmed dot type phase defects 80 nm wide and 2.4 nm high with absorber patterns of halfpitch 88-nm lines-and-spaces. The positions of the phase defects relative to the absorber lines were designed to be shifted accordingly. Transmission electron microscope observations revealed that the line type phase defects starting from the bottom surface of the ML propagated toward the ML's top surface, while inclined toward the center of the EUV blank. At the distances of 0 and 66 mm from the center of the EUV blank, the inclination angles varied from 0 to 4 deg. The impacts of the inclination angles on EUV microscope images were significant even though the positions of the phase defect relative to the absorber line, as measured by a scanning probe microscope, were the same. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…However, the path to establish the EUVL is not without technical difficulties. For example, a lack of sufficient light-source power, particle-free mask handling, defect-free and flat mask blanks, [1][2][3][4][5] and resist material development 6,7 all need to be addressed. From the viewpoint of EUV mask fabrication, mask pattern defect inspection [8][9][10][11] and repair [12][13][14] are some of the most demanding tasks to be dealt with.…”

Section: Introductionmentioning

confidence: 99%

Measurement of the phase defect size using a scanning probe microscope and at-wavelength inspection tool

Amano¹,

Abe

2015

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Predicting the lithography impact of a phase defect embedded in a mask used for extreme ultraviolet lithography on the printed image on wafer is a challenging task. In this study, two types of measurement tools were employed to characterize the phase defects. The prior measurement tool was a scanning probe microscope used for measuring the surface topography of phase defects, and the second was an at-wavelength darkfield inspection tool capable of capturing a phase defect and then calculating the defect detection signal intensity (DSI) from those images. A programmed phase defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the phase defect volumes. The influence of the phase defects on the printed image on a wafer was also calculated using a lithography simulator. The simulation results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the phase defect volumes. As a result, the influence of the phase defect on the printed CD can be predicted from the values of the DSIs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Mask technology of extreme-ultraviolet lithography

Cited by 13 publications

References 8 publications

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Observation of phase defect on extreme ultraviolet mask using an extreme ultraviolet microscope

Measurement of the phase defect size using a scanning probe microscope and at-wavelength inspection tool

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