Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

Teichert, Fabian; Zienert, Andreas; Schuster, Jörg; Schreiber, Michael

doi:10.1016/j.commatsci.2017.06.001

Cited by 16 publications

(14 citation statements)

References 48 publications

(56 reference statements)

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“…Flores et al verified this for the first time with quantum transport calculations for metallic CNTs [25]. We confirmed this by a more comprehensive analysis [30] and extended it to defect mixtures [31]. An investigation of semiconducting zig-zag CNTs [32] showed qualitatively similar results for the localization and the diffusive regime at fixed energy.…”

Section: Introductionsupporting

confidence: 77%

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Electronic transport through defective semiconducting carbon nanotubes

Teichert¹,

Zienert²,

Schuster³

et al. 2018

J. Phys. Commun.

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We investigate the electronic transport properties of semiconducting (m, n) carbon nanotubes (CNTs) on the mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum transport calculations based on recursive Green's function techniques and an underlying density-functional-based tight-binding model for the description of the electronic structure. Zigzag CNTs as well as chiral CNTs of different diameter are considered. Different defects are exemplarily represented by monovacancies and divacancies. We show the energy-dependent transmission and the temperature-dependent conductance as a function of the number of defects. In the limit of many defetcs, the transport is described by strong localization. Corresponding localization lengths are calculated (energy dependent and temperature dependent) and systematically compared for a large number of CNTs. It is shown, that a distinction by (m−n)mod 3 has to be drawn in order to classify CNTs with different bandgaps. Besides this, the localization length for a given defect probability per unit cell depends linearly on the CNT diameter, but not on the CNT chirality. Finally, elastic mean free paths in the diffusive regime are computed for the limit of few defects, yielding qualitatively same statements.

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Section: Introductionsupporting

confidence: 77%

“…Different colors denote different subsets (m−n) mod 3. For the CNTs with light color, MV defects are considered, for the ones with dark color, both MV and DV defects are considered separately (Mixtures of defects were studied previously[31]). (Bottom) Unit cells of some exemplary CNTs with three different chiral angles θ.…”

mentioning

confidence: 99%

Electronic transport through defective semiconducting carbon nanotubes

Teichert¹,

Zienert²,

Schuster³

et al. 2018

J. Phys. Commun.

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“…Charge transport properties of modified CNTs are analyzed within the LB formulation of the conductance [30][31][32][33][34] , which is particularly appropriate to study charge motion along a Q1D device channels. At quasi-equilibrium conditions, i.e.…”

Section: B Conductance Calculationsmentioning

confidence: 99%

Unequivocal signatures of the crossover to Anderson localization in realistic models of disordered quasi-one-dimensional materials

et al. 2018

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The only unambiguous known criterion for single-parameter scaling Anderson localization relies on the knowledge of the full conductance statistics. To date, theoretical studies have been restricted to model systems with symmetric scatterers, hence lacking universality. We present an in-depth statistical study of conductance distributions P(g), in disordered 'micrometer-long' carbon nanotubes using first principles simulations. In perfect agreement with the Dorokov-Mello-Pereyra-Kumar scaling equation, the computed P(g) exhibits a non-trivial, non-Gaussian, crossover to Anderson localization which could be directly compared with experiments.

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“…For the variation of the conductivity of each MWCNT, there are two possible reasons: first, the CNT quality can scatter due to the on‐chip growth—such that the intrinsic CNT conductance alters. In an earlier study, Teichert et al could demonstrate the strong impact of the number of defects on the CNT conductance. Second, it is likely that the conductance of the CNT‐metal contact can vary—as a function of contact material and processing .…”

Section: Electrical Propertiesmentioning

confidence: 94%

Advanced Characterization Methods for Electrical and Sensoric Components and Devices at the Micro and Nano Scales

Sheremet

Meszmer

Blaudeck

et al. 2019

Physica Status Solidi (a)

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The present study covers the nanoanalysis methods for four key material characteristics: electrical and electronic properties, optical, stress and strain, and chemical composition. With the downsizing of the geometrical dimensions of the electronic, optoelectronic, and electromechanical devices from the micro to the nanoscale and the simultaneous increase in the functionality density, the previous generation of microanalysis methods is no longer sufficient. Therefore, the metrology of materials' properties with nanoscale resolution is a prerequisite in materials' research and development. The article reviews the standard analysis methods and focuses on the advanced methods with a nanoscale spatial resolution based on atomic force microscopy (AFM): current-sensing AFM (CS-AFM), Kelvin probe force microscopy (KPFM), and hybrid optical techniques coupled with AFM including tip-enhanced Raman spectroscopy (TERS), photothermal-induced resonance (PTIR) characterization methods (nano-Vis, nano-IR), and photo-induced force microscopy (PIFM). The simultaneous acquisition of multiple parameters (topography, charge and conductivity, stress and strain, and chemical composition) at the nanoscale is a key for exploring new research on structure-property relationships of nanostructured materials, such as carbon nanotubes (CNTs) and nano/microelectromechanical systems (N/MEMS). Advanced nanocharacterization techniques foster the design and development of new functional materials for flexible hybrid and smart applications.

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Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

Cited by 16 publications

References 48 publications

Electronic transport through defective semiconducting carbon nanotubes

Electronic transport through defective semiconducting carbon nanotubes

Unequivocal signatures of the crossover to Anderson localization in realistic models of disordered quasi-one-dimensional materials

Advanced Characterization Methods for Electrical and Sensoric Components and Devices at the Micro and Nano Scales

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