Electronic stopping powers for heavy ions in silicon

Zhang, Yongfeng; Weber, William J.; Whitlow, Harry J.

doi:10.1016/j.nimb.2003.09.005

Cited by 29 publications

(17 citation statements)

References 22 publications

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“…Since the SRIM predicted electronic stopping power for He in SrTiO 3 is used to convert energy differences, accurate electronic stopping power values are essential to the reliable determination of both damage profile and Au distribution from the RBS measurements. Good He stopping predictions from the SRIM code have been validated experimentally in Si [33], Au [34], SiC [35,36] and a few oxides [37][38][39], which provide some confidence of using the SRIM predicted He stopping in SrTiO 3 .…”

Section: Large Deviation Between Srim Predicted Profiles and The Expementioning

confidence: 67%

Response of strontium titanate to ion and electron irradiation

Zhang

Lian

Zhu

et al. 2009

Journal of Nuclear Materials

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Section: Large Deviation Between Srim Predicted Profiles and The Expementioning

confidence: 67%

Response of strontium titanate to ion and electron irradiation

Zhang

Lian

Zhu

et al. 2009

Journal of Nuclear Materials

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“…Since the stopping power prediction from SRIM is based on fitting with experimental data, it usually provides reasonable predictions. In the past few years, improvements in SRIM have focused on the stopping powers for light ions [13][14][15]. The experimental stopping powers for heavy ions contain far more uncertainties than for light ions.…”

Section: Srim Results Compared With Sims Datamentioning

confidence: 99%

MeV Au ion irradiation in silicon and nanocrystalline zirconia film deposited on silicon substrate

Chang

Zhang

Zhu

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…distribution. This may be attributed to the fact that SRIM slightly overestimates stopping power, and consequently predicts lower ranges than the experimental ones [19,20].…”

Section: Results For Er: Te Glassmentioning

confidence: 88%

“…The relatively large differences between the positions of the boundaries obtained by spectroscopic ellipsometric simulations, and that of the peak of the N + distribution cannot be attributed exclusively to the fact that SRIM overestimates stopping power [18,19]. It may be due to the convergence problems we experienced in the spectroscopic ellipsometric simulations.…”

mentioning

confidence: 99%

M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications

et al. 2013

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Irradiation with N+ ions of the 1.5 -3.5 MeV energy range was applied to optical waveguide formation. Planar and channel waveguides have been fabricated in an Er-doped tungsten-tellurite glass, and in both types of bismuth germanate (BGO) crystals: Bi4Ge3O12 (eulytine) and Bi12GeO20 (sillenite). Multi-wavelength m-line spectroscopy and spectroscopic ellipsometry were used for the characterisation of the ion beam irradiated waveguides. Planar waveguides fabricated in the Er-doped tungsten-tellurite glass using irradiation with N+ ions at 3.5 MeV worked even at the 1550 nm telecommunication wavelength. 3.5 MeV N+ ion irradiated planar waveguides in eulytine-type BGO worked up to 1550 nm and those in sillenite-type BGO worked up to 1330 nm. According to our previous investigations [7], MeV energy N + irradiations at high fluences resulted in the formation of a barrier layer around the stopping range of the ions. The fluences indicated in Table 1 were appropriate to obtain sufficiently large refractive index difference between the well and the barrier for guiding. The Guest Editor 3) The waveguide losses can be measured by using back-reflection method even for short samples. Any method for ion implanted waveguide has its own advantages and shortcomings. The authors should not expect too much from longer samples. For high-loss waveguides, the surface scattering method reflects sometimes very wrong results.We have made the following modifications to comply with the above request:We added the following sentence to Chapter 6. Conclusion, on page 18 line 5:Besides of the double prism method, propagation losses will be measured by the backreflection method, too. 4) Only showing the modal lines is a not a direct proof for a real waveguide. For some ion implanted waveguides, one can detect beautiful modes, but the light cannot go through the waveguides with a simple end-face coupling system. So what I suggest for the future work is not to make more samples but to first test the propagation (transmission) of light in the waveguide. This can be stated in the Conclusion section.We have made the following modifications to comply with the above request:We added the following sentence before the last sentence of the 6. Conclusion Chapter: 2.Issues raised by Reviewer #2: Firstly the paper is not particularly well written. The introduction does not critically review past studies and as a result it is not clear how this present study is novel or different.Since this article is not a review, detailed discussion of previous art is outside its scope. This article is based on an oral presentation given at Symposium W-Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III of the 2012 Spring meeting of the EMRS Society, our aim was to present the following novelties of our results:1. Application of spectroscopic ellipsometry to the quantitative study of (ion beam irradiated) planar optical waveguides 2. Comparison of the spectroscopic ellipsometric results with the predictions of SRIM simu...

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Electronic stopping powers for heavy ions in silicon

Cited by 29 publications

References 22 publications

Response of strontium titanate to ion and electron irradiation

Response of strontium titanate to ion and electron irradiation

MeV Au ion irradiation in silicon and nanocrystalline zirconia film deposited on silicon substrate

M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications

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