Electronic stopping dependence of ion beam induced modifications in GaN

Photoluminescence and photoluminescence excitation studies in 80MeV Ni ion irradiated MOCVD grown GaN

“…It appears that a high concentration of radiation annealed gallium vacancies consequently has resulted in reduction of YL band intensity while the vacancy concentration of nitrogen favors BL band. The latter has been shown from micro-Raman measurements; as the S e value increases the nitrogen-related defect mode intensity also increases [20]. A decrease in YL intensity upon irradiation has been noticed which could be due to annihilation of defects [12].…”

“…Effects of ion beams on optical and structural properties of semiconductors such as GaN and related materials are discussed [15][16][17][18][19]. Electronic energy loss of heavy ions in GaN increases the compressive strain as evidenced by HRXRD and Raman characterizations [20]. In the present study, the effects of 80 MeV Ni ions irradiation in GaN and subsequent rapid thermal annealing (RTA) on various luminescence properties have been investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy.…”