Structural and optical characteristics investigations in oxygen ion implanted GaN epitaxial layers

Pandey, Akhilesh; Raman, R.; Dalal, Sandeep; Kaur, Davinder; Kapoor, A. K.

doi:10.1016/j.mssp.2019.104833

Cited by 10 publications

(9 citation statements)

References 36 publications

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“…Large number of ions implanted into material can lead to the lattice expansion, which caused broadening of the XRD peaks. 27,28 The XRCs of as-grown, C-implanted, and sample annealed at 1050 °C for the (002) and (102) planes are shown in Figs. 2a and 2b.…”

Section: Resultsmentioning

confidence: 99%

The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition

Zhao

Feng

et al. 2020

ECS J. Solid State Sci. Technol.

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N-polar GaN films were grown on c-plane sapphire substrates by metal organic chemical vapor deposition and implanted with C or O ion were studied. High-resolution X-ray diffraction results show that, after implantation, there were clear increases in the full widths at half maximum of rocking curves. However, the increases disappeared after annealing at 1050 °C for 30 min. Photoluminescence (PL) spectra obtained from the N-polar GaN films before and after implantation indicated a significant increase in the yellow luminescence (YL) band after C-implantation while O-implantation sample showed only a slight increase. It can be concluded that gallium vacancies and related complex defects were not the major factor for YL. The present result confirmed that the implanted C impurity and its complexes are responsible for the increased YL intensities.

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Section: Resultsmentioning

confidence: 99%

The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition

Zhao

Feng

et al. 2020

ECS J. Solid State Sci. Technol.

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“…All these peaks can be categorized into disorder activated Raman scattering (DARS) and scattering mechanisms of implantation-induced defects, namely interstitials, vacancies (V N , V Ga/Al ) or antisites in the host lattice. The specific nature of the defects that give rise to the appearing of post-implanted peaks was well discussed by Katiskini et al [31] and recently by Pandey et al [30] in various ion-implanted GaN, mainly with oxygen, nitrogen, magnesium, and silicon. Similarly, other studies of ion-implanted GaN with rare-earth metals (Er, Gd) [32,33] or other elements (Be, C) [34,35] were reported discussing different multiphonon behaviour.…”

Section: Structural Examinationmentioning

confidence: 92%

“…The Raman spectra of P-implanted structures are very noisy with high background intensity. The increase of background intensity, in particular at low B FWHM FWHM broadening factor (%), FWHM full width at half maximum frequencies, can be attributed to the second-order Raman processes activated due to the implantationinduced disorders and involving the combination of acoustic and optic phonon modes [29,30] or due to the increased Rayleigh scattering caused by defect enhancement [31]. Moreover, the absence of any resolvable Raman modes of (Al)GaN is an indication that the solely implanted (Al)GaN:Mg layers are highly defective or even partially amorphous due to implantation damage.…”

Section: Structural Examinationmentioning

confidence: 99%

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Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling

Piętak

Złotnik

Rozbiegała

et al. 2020

J Mater Sci: Mater Electron

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Phosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-doped (Al)GaN structures have not been systematically evaluated, regarding structural verification and elemental distribution. Here, comprehensive studies of P ions impact on structural degradation are presented. Furthermore, a post-implantation annealing conducted at different temperatures is examined as well. The results demonstrated that the structural changes in the examined compounds, namely GaN and Al0.1Ga0.9N, due to P implantation and a subsequent recovery by thermal annealing follow similar trends. Interestingly, it was revealed that P diffusion length is higher in AlGaN than in GaN, possibly due to higher oxygen content in Al-containing compounds, analogous to Mg dopant. Additionally, the initial Mg concentration in (Al)GaN is crucial because too high Mg doping could be the main cause of electrical properties degradation of (Al)GaN heterostructures after P ion implantation.

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“…14 Ion sources such as Co, Fe, Ni, and O have been utilized to investigate their implantation defect profiles in GaN. 15,16 Ion implantation processes have also been employed in resonant-cavity LEDs (RC-LEDs) and verticalcavity surface-emitting lasers (VCSELs). Boron ion implantation has been applied to confine current in VCSEL applications.…”

Section: Introductionmentioning

confidence: 99%

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Shiu,

Wang,

et al. 2024

ACS Appl. Nano Mater.

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InGaN resonant-cavity light-emitting diodes (RC-LEDs) with a dielectric distributed Bragg reflector (DBR), a porous-GaN DBR, and a nitrogen ion (N + )-implanted aperture (6 μm diameter) were demonstrated. In the ion implantation process, the N + ions were penetrated directly through an indium-tin-oxide conductive layer and SiO 2 layer to form the insulated p-GaN:Mg layer, which provides a fascinating current confinement structure. The broadened electroluminescence (EL) peaks were measured at 401.5 and 435.8 nm in the implanted LED without double DBR structures. Multiple EL emission peaks with narrow line widths were observed in the RC-LED structure, indicating a strong resonant effect with different cavity modes. Two groups of effective resonant-cavity lengths, 1.48 and 1.50 μm, were analyzed through the angle-resolved EL spectra due to the anisotropic porous-GaN layers in the porous DBR structure. The divergent angles in far-field EL radiation patterns were reduced from 118°for the nontreated LED to 28°for the RC-LED structures. A high resonant-cavity effect, line-width narrowing phenomenon, and small divergent angle were observed in the InGaN RC-LED with 6 μm-diameter ion-implanted aperture and top dielectric/bottom porous DBR structures.

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Structural and optical characteristics investigations in oxygen ion implanted GaN epitaxial layers

Cited by 10 publications

References 36 publications

The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition

The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition

Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

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