Abstract:A critical review of experimental results aiming at determining the atomic geometry and the electronic properties of the hydrogenated (110) surfaces of III–V semiconductor compounds is given. Results deal mainly with the prototype GaAs(110) surface. Experimental results include photoemission, electron energy loss, metastable deexcitation spectroscopy, Auger electron spectroscopy, photoelectron diffraction and grazing incidence X‐ray diffraction data. A unified picture for the hydrogenated surface can be derive… Show more
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